150N03

BSO150N03_10 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC 1) for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit 10 secs steady state Continuous drain current I D T A=25 °C2) 9.1 7.6 A Pulsed drain current I D,pulse T A=25 °C3) Avalanche energy, single pulse E AS I D=9.1 A, R GS=25 Ω mJ Reverse diode dv /dt dv /dt I D=9.1 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C2) 2.0 1.4 W Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 Value 55/150/56 -55 ... 150 ±20 V DS 30 V R DS(on),max 15 mΩ I D 9.1 A Product Summary PG-DSO-8 Type Package Marking BSO150N03 PG-DSO-8 150N3 Rev. 1.7 page 1 2010-05-11

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJS - - 50 K/W Thermal resistance, junction - ambient R thJA minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area2), t p≤10 s -- 6 3 6 cm2 cooling area2), steady state -- 9 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=25 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=8.4 A - 15.2 19 mΩ V GS=10 V, I D=9.1 A - 12.5 15 Gate resistance R G - 1.5 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=9.1 A 13 26 - S 3) See figure 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 1)J-STD20 and JESD22 Rev. 1.7 page 2 2010-05-11

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1420 1890 pF Output capacitance C oss - 510 680 Reverse transfer capacitance C rss - 67 100 Turn-on delay time t d(on) - 5.3 7.9 ns Rise time t r - 4.0 6.0 Turn-off delay time t d(off) -2 1 3 1 Fall time t f - 3.0 4.5 Gate Charge Characteristics4) Gate to source charge Q gs - 3.9 5.2 nC Gate charge at threshold Q g(th) - 2.3 3.0 Gate to drain charge Q gd - 2.6 4.0 Switching charge Q sw - 4.3 6.1 Gate charge total Q g -1 1 1 5 Gate plateau voltage V plateau - 2.8 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 9.6 13 nC Output charge Q oss V DD=15 V, V GS=0 V -1 2 1 6 Reverse Diode Diode continous forward current I S --2 A Diode pulse current I S,pulse -- 3 6 Diode forward voltage V SD V GS=0 V, I F=2 A, T j=25 °C - 0.75 1 V Reverse recovery charge Q rr V R=12 V, I F=I S, di F/dt =400 A/µs - - 10 nC 4) See figure 16 for gate charge parameter definition T A=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=4.5 A, R G=2.7 Ω V DD=15 V, I D=4.5 A, V GS=0 to 5 V Rev. 1.7 page 3 2010-05-11

1 Power dissipation 2 Drain current

P tot=f(T A); t p≤10 s I D=f(T A); V GS≥10 V; t p≤10 s 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms 10 s DC 10210110010-1 102 101 100 10-1 10-2 0.01 0.1 100 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 102 101 100 10-1 0.1 100 t p [s] Z thJS [K/W] 0.5 1.5 2.5 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] I D [A] Rev. 1.7 page 4 2010-05-11

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3.4 V 3.6 V 3.8 V 4 V 4.2 V 4.5 V 5 V 10 V 01 0 2 0 3 0 I D [A] R DS(on) [mΩ] 25 °C 125 °C 01234 V GS [V] I D [A] 01 0 2 0 3 0 I D [A] g fs [S] 2.6 V 2.8 V 3 V 3.1 V 3.2 V 3.3 V 4.5 V 10 V 0123 V DS [V] I D [A] Rev. 1.7 page 5 2010-05-11

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=9.1 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 25 µA 250 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 100 1000 10000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98 % 0.1 100 V SD [V] I F [A] Rev. 1.7 page 6 2010-05-11

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=4.5 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 6 V 15 V 24 V 0 4 8 12 16 20 24 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C125 °C 0.1 1 10 100 1000 t AV [µs] I AV [A] Rev. 1.7 page 7 2010-05-11

Rev. 1.7 page 8 2010-05-11

81726 Munich, Germany

© 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user Rev. 1.7 page 9 2010-05-11