14TX0614

14TX0614 MIMIX | Alldatasheet

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Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 250,150,250 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout Units GHz GHz GHz dB dB dBm dB dBm VDC VDC VDC VDC mA mA mA mA Min. 10.0 7.0 DC -1.2 Typ. 18.0 9.0 +6.0 18.0 +17.0 +5.0 -5.0 -0.6 -0.1 140 140 140 Max. 18.0 21.0 3.0 +5.5 +0.1 200 100 200 200 Parameter Frequency Range (RF) Upper Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) LO Input Drive (P LO) Isolation LO/RF Output Third Order Intercept (OIP3) Drain Bias Voltage (Vd1,2,3) Source Bias Voltage (Vs1) Gate Bias Voltage (Vg1), Mixer Gate Bias Voltage (Vg2,3) Supply Current (Id1) (Vd1=5.0V) Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical) Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical) Supply Current (Iss) (Vss=-5.0V) (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 14TX0614 September 2005 - Rev 01-Sep-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 2 of 8 Transmitter Measurements Pre-production 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05 C onv. G ain / Image R ejecti on USB, IF = 2 G Hz, LO = +6 dBm -50 -45 -40 -35 -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 R F ( GHz ) Conv . Ga in (dB) / Image Re jection (dBc) Conv. G ain Image Rej ect C onv. G ain / Image R ejecti on LSB, IF = 2 G Hz, LO = +6 dBm -50 -45 -40 -35 -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 R F ( GHz ) Conv . Ga in (dB) / Image Re jection (dBc) LSB Conv G ain Image Re ject L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dBm a nd +8 dBm , 3 0 Ma y 2005: OIP3 avg (dBm ) vs . RF (GHz ) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF (G Hz) OIP3 a vg (dBm) OIP3, PL O (dBm)=4, RC=R1 0C6 OIP3, PL O (dBm)=4, RC=R1 1C5 OIP3, PL O (dBm)=4, RC=R1 1C7 OIP3, PL O (dBm)=4, RC=R1 2C4 OIP3, PL O (dBm)=6, RC=R1 0C6 OIP3, PL O (dBm)=6, RC=R1 1C5 OIP3, PL O (dBm)=6, RC=R1 1C7 OIP3, PL O (dBm)=6, RC=R1 2C4 OIP3, PL O (dBm)=8, RC=R1 0C6 OIP3, PL O (dBm)=8, RC=R1 1C5 OIP3, PL O (dBm)=8, RC=R1 1C7 OIP3, PL O (dBm)=8, RC=R1 2C4 US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dBm a nd +8 dBm , 3 0 Ma y 2005: OIP3 avg (dBm ) vs . RF (GHz ) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF (G Hz) OIP3 a vg (dBm) OIP3 , PL O (dBm)=4, RC=R1 0C6 OIP3 , PL O (dBm)=4, RC=R1 1C5 OIP3 , PL O (dBm)=4, RC=R1 1C7 OIP3 , PL O (dBm)=4, RC=R1 2C4 OIP3 , PL O (dBm)=6, RC=R1 0C6 OIP3 , PL O (dBm)=6, RC=R1 1C5 OIP3 , PL O (dBm)=6, RC=R1 1C7 OIP3 , PL O (dBm)=6, RC=R1 2C4 OIP3 , PL O (dBm)=8, RC=R1 0C6 OIP3 , PL O (dBm)=8, RC=R1 1C5 OIP3 , PL O (dBm)=8, RC=R1 1C7 OIP3 , PL O (dBm)=8, RC=R1 2C4 L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dBm a nd +8 dBm , 3 0 Ma y 2005: IIP3 avg (dBm ) vs . RF (GHz ) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF (GH z) IIP3 av g (dBm) IIP3, PL O (dBm)=4, R C =R 10C6 IIP3, PL O (dBm)=4, R C =R 11C5 IIP3, PL O (dBm)=4, R C =R 11C7 IIP3, PL O (dBm)=4, R C =R 12C4 IIP3, PL O (dBm)=6, R C =R 10C6 IIP3, PL O (dBm)=6, R C =R 11C5 IIP3, PL O (dBm)=6, R C =R 11C7 IIP3, PL O (dBm)=6, R C =R 12C4 IIP3, PL O (dBm)=8, R C =R 10C6 IIP3, PL O (dBm)=8, R C =R 11C5 IIP3, PL O (dBm)=8, R C =R 11C7 IIP3, PL O (dBm)=8, R C =R 12C4 US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dBm a nd +8 dBm , 3 0 Ma y 2005: IIP3 avg (dBm ) vs . RF (GHz ) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF (GH z) IIP3 av g (dBm) IIP3, PL O (dBm)=4, R C =R 10C6 IIP3, PL O (dBm)=4, R C =R 11C5 IIP3, PL O (dBm)=4, R C =R 11C7 IIP3, PL O (dBm)=4, R C =R 12C4 IIP3, PL O (dBm)=6, R C =R 10C6 IIP3, PL O (dBm)=6, R C =R 11C5 IIP3, PL O (dBm)=6, R C =R 11C7 IIP3, PL O (dBm)=6, R C =R 12C4 IIP3, PL O (dBm)=8, R C =R 10C6 IIP3, PL O (dBm)=8, R C =R 11C5 IIP3, PL O (dBm)=8, R C =R 11C7 IIP3, PL O (dBm)=8, R C =R 12C4

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 3 of 8 Pre-production Transmitter Measurements (cont.) 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05 L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF ( GHz ) L O IS O (dB) LO/R F, PL O (dBm)=4, R C =R10C6 LO/R F, PL O (dBm)=4, R C =R11C5 LO/R F, PL O (dBm)=4, R C =R11C7 LO/R F, PL O (dBm)=4, R C =R12C4 LO/R F, PL O (dBm)=6, R C =R10C6 LO/R F, PL O (dBm)=6, R C =R11C5 LO/R F, PL O (dBm)=6, R C =R11C7 LO/R F, PL O (dBm)=6, R C =R12C4 LO/R F, PL O (dBm)=8, R C =R10C6 LO/R F, PL O (dBm)=8, R C =R11C5 LO/R F, PL O (dBm)=8, R C =R11C7 LO/R F, PL O (dBm)=8, R C =R12C4 US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m, +6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 RF ( GHz ) L O IS O (dB) LO/R F, PL O (dBm)=4, R C =R10C6 LO/R F, PL O (dBm)=4, R C =R11C5 LO/R F, PL O (dBm)=4, R C =R11C7 LO/R F, PL O (dBm)=4, R C =R12C4 LO/R F, PL O (dBm)=6, R C =R10C6 LO/R F, PL O (dBm)=6, R C =R11C5 LO/R F, PL O (dBm)=6, R C =R11C7 LO/R F, PL O (dBm)=6, R C =R12C4 LO/R F, PL O (dBm)=8, R C =R10C6 LO/R F, PL O (dBm)=8, R C =R11C5 LO/R F, PL O (dBm)=8, R C =R11C7 LO/R F, PL O (dBm)=8, R C =R12C4

Vd2,3 IF2 LO Vg1 IF1 RF Vd1A Vg2,3 2 3 4 810 1.100 (0.043) 2.200 (0.087) 0.169 (0.007) 0.569 (0.022) 1.169 (0.046) 1.968 (0.077) 2.368 (0.093) 3.200 (0.126) 1.824 (0.072) 2.368 (0.093) 1.968 (0.077) 1.169 (0.046) 0.569 (0.022) 0.0 0.0 0.169 (0.007) Pre-production Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 4 of 8 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 14TX0614) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (LO) Bond Pad #2 (Vg1) Bond Pad #3 (Vd1A) Bond Pad #4 (IF1) Bond Pad #5 (Vg2) Bond Pad #6 (Vg3) Bond Pad #7 (RF) Bond Pad #8 (Vd3) Bond Pad #9 (Vd2) Bond Pad #10 (IF2) Bond Pad #11 (Vd1B) Bond Pad #12 (Vg1) 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 5 of 8 MTTF T ables (TBD) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius FITs MTTF Hours Rth C/W C/W C/W Bias Conditions: Vd1=Vd2=Vd3=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA, Is1=140mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA and Is1=140mA. Additionally, a mixer is also required with Vg1=-0.6V. Adjusting Vg1 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. Gain control can be adjusted by varying Vg2,3 from 0.0 to -1.2 V with 0.0V providing minimum attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.2V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias -- Each DC pad (Vd1,2,3, Vss, and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 6 of 8 App Note [3] USB/LSB Selection - USBLSB IF1IF2 An alternate method of Selection of USB or LSB: For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Upper Side Band operation (USB): -180º In Pha s e Co mbiner USB In Pha s e Co mbiner LSB -180º IF2 IF1 IF2 IF1 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 7 of 8 Device Schematic 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 8 of 8 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614September 2005 - Rev 01-Sep-05