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2SC1318A PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A n Features l High collector to emitter voltage VCEO . l Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 750 150 –55 ~ +150 Unit V V V A A mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 10V , IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 160 100 0.2 0.85 120 max 0.1 340 0.6 1.5 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement

PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB ICBO — Ta 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 IB=–10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Ta=25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (A) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 200 160 120 180 140 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 180 60 120 102 103 104 VCB =20V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C)

ICEO — Ta 0 140 6020 80 12040 100 102 103 105 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C)