12F NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

High surge current capability Avalanche types available Stud cathode and stud anode version Wide current range Types up to 1200VVRRM Stud Version 12A TypicalApplications Battery charges Converters Power supplies Machine tool controls Major Ratings and Characteristics Parameters F(AV) @TC f (RMS) FSM

  • I2t VRRM L @50Hz @60Hz @50Hz @ 60Hz range range 12F(R) 144 265 280 351 320 10010 1200 -65 to 175 Units A A A A A2S A2s V Quality Semi-Conductors

12F(R) Series ELECTRICAL SPECIFICATIONS Voltage Ratings Type number 12F(R) Voltage Code 100 120 VRRU, maximum repetitive peak reverse voltage V 100 200 400 600 800 1000 1200 V_... maximum non- RSM repetitive peak reverse voltage V 150 275 500 725 950 1200 1400 V minimum avalanche voltage V (1) 500 750 950 1150 1350 lRRMmax @T = 175'C rnA (1) Avalanche version only available from VRRM 400V to 1200V Forward Conduction Parameter I(.AV Max average forward current @ Case temperature IL. RM,. Max. RMS forward current PR Maximum non-repetitive peak reverse power IFSM Max. peak, one-cycle forward, non-repetitive surge current l-t Maximum R for fusing l-\\ Maximum IM for fusing VFlTf Low level value of threshold voltage Vf , ,0| , High level value of threshold voltage r Low level value of forward slope resistance i,2 High level value of forward slope resistance VFM Max. forward voltage drop 12F(R) 144 265 280 225 235 351 320 250 226 3510 0 77 0.97 10.70 6.20 1 26 Units A A K/W A A3s A^s V mU V Conditions 180° conduction, haft sine wave 10us square pulse, T; = T: max. see note (2) 1 = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100%v™ reapplied No voltage reapplied 100%VRRH reapplied Sinusoidal half wave, Initial T, - T! max. t = 0. 1 to 10ms. no voltage reapplied (16 7% x nxliiAV| <;| •; ,r x IF|AV|). Tj =Tj max. (16.7% x it x lp ftvi * I ', IT x lr.AV|). Tj = T, max (I > itx II|AV|), T, = T, max I = 38A. T, = 25°C. t = 400ps rectangular wave (2) Available only for Avalanche version, all other parameters the same as 12F

12F(R) Series Thermal and Mechanical Specifications Parameter T Max junction operating temperature range T Max. storage temperature range Rh , Max. thermal resistance, junction to case R]hrs Max. thermal resistance, case to heatsink T Mounting torque, ± 10% wt Approximate weight Case style 12F(R) -65to 175 -6510200 0.5 1.2 (1.5) 7 (0 25) Units K/W Nm 9 (oz) DO-203AA (DO-4) Conditions DC operation Mounting surface, smooth, flat and greased Lubricated threads (Not lubricated threads) See Outline Table ARthJC Conduction (The following table shows the increment of thermal re&stence Rfl|jr, when devices operate at different conduction angles than DC) Conduction angle 180° 120' 90' 60" 30" Sinusoidal conduction 0 33 0.41 053 078 1.28 Rectangular conduction 0.26 0 44 0.58 0.81 1.29 Units K/W Conditions T( - T max. Ordering Information Table D D Device Code A = Avalanche diode None = Standard diode Current rating: Code = IF Av) F = Standard device None = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) Voltage code: Code x 10 = VRRM (See Voltage Ratings table) None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)

12F(R) Series Outlines Table (0.07) • (0.01) 10/32"UNF-2A for metric devices; M5 X 0,8 (0.03) ' (0,004) i 6.8 (0.27) Case Style DO-203AA (DO-4) All dimensions in millimeters (inches)