12DBL0409

12DBL0409 MIMIX | Alldatasheet

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Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Fundamental Level at the Output RF Input Power (RF Pin) Output Power at +9.0 dBm Pin (Pout) Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id1,2) (Vd=3.5V, Vg1=-0.7V, Vg2=-0.2 Typical) Units GHz GHz dB dB dBc dBm dBm VDC VDC VDC mA Min. 10.0 20.0 -1.2 -1.2 Typ. TBD TBD -30.0 +9.0 +15.0 +3.5 -0.7 -0.2 Max. 13.0 26.0 +5.5 +0.1 +0.1 100 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 110 mA +0.3 VDC +15.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout 12DBL0409 Page 1 of 6 (1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05

10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler Doubler Measurements 12DBL0409 Page 2 of 6Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05 0409_typical: Pout (2xFin) vs. Fin (GHz) Pin = 6 & 9dBm, Regulated Bias: VD1=3.5V, ID1=20mA, VD2=3.5, ID2=50mA -30 -25 -20 -15 -10 6 7 8 9 10 11 12 13 14 15 16 Fin (GHz) Pout (2xFin) , Pin (dBm)=6 , Pin (dBm)=9 , Pin (dBm)=6 , Pin (dBm)=9 Pout (2xFin) Pout (1xFin) 0409_wafer_sweep: Pout (2xFin) vs. Fin (GHz) Pin = 9dBm, Regulated Bias: VD1=3.5V, ID1=20mA, VD2=3.5, ID2=50mA 8 9 10 11 12 13 14 15 Fin (GHz) Pout (2xFin) Pout (2xFin) 0409_wafer_sweep: Pout (2xFin) vs. Fin (GHz) Pin = 9dBm, Regulated Bias: VD1=3.5V, ID1=20mA, VD2=3.5, ID2=50mA -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 Fin (GHz) Pout (2xFin) Pout (2xFin) Pout (1xFin)

0.970 (0.038) 2 3 0.483 (0.019) 0.881 (0.035) 0.362 (0.014) 0.795 (0.031) 1.620 (0.064) 0.394 (0.016) 0.0 0.0 0.605 (0.024) Pre-production 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler Mechanical Drawing 12DBL0409 Page 3 of 6Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05 Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 12DBL0409) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.115 +/- 0.010 (0.0045 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2) Bond Pad #6 (Vg1) RF In Vd1 Vd2 RF Out Vg2Vg1

10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler 12DBL0409 Page 4 of 6Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05 App Note [1] Biasing - It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=3.5V with Id1=20mA and Id2=50mA. Separate biasing is recommended if the doubler is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.7V and Vg2=-0.2V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2 and Vg1, 2) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF T ables Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 96.6 deg Celsius 119.6 deg Celsius 142.3 deg Celsius FITs 3.64E-02 5.13E-01 5.24E+00 MTTF Hours 2.75E+10 1.95E+09 1.91E+08 Rth 169.6 ° C/W 181.9° C/W 193.0° C/W Bias Conditions: Vd1=Vd2=3.5V, Id1=20 mA, Id2=50 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler Device Schematic 12DBL0409 Page 5 of 6Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05 T ypical Application RF IN 21.5-23.5 GHz IR Mixer XR1002 BPF IF Out

2 GHz

Atten=0-12dB AGC Control LO(+9.0dBm) 9.75-11.75 GHz 11.75-12.75 GHz 19.5-21.5 GHz (USB Operation) 23.5-25.5 GHz (LSB Operation) 12DBL0409 Mimix Broadband MMIC-based 20.0-26.0 GHz Doubler/Receiver Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)

10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler 12DBL0409 Page 6 of 6Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2005 - Rev 01-Mar-05 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.