1214-55 GHZTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214 - 55
55 Watts - 28 Volts, Pulsed
The 1214-55 is an internally matched, COMMON BASE transistor capable of providing 55 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 175 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 8 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1200-1400 MHz Vcc = 28 Volts Pulse Width = 2 ms Duty = 20 % F=1300MHz, Po=55W 6.5 7.0 12.3 3:1 Watts Watts d B BVces BVebo Hfe θjc Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Thermal Resistance Ic =100 mA Ie = 15 mA Vce = 5 V,Ic = 1000 mA Rated Pulse Condition 3.5 20 45 1.0 Volts Volts C/W o Issue August 1996