1214-30 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-30
30 Watts, 28 Volts, Pulsed
GENERAL DESCRIPTION CASE OUTLINE The 1214-30 is an internally matched, COMMON BASE transistor capable of providing 30 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for long pulse radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 88 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 4.0 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST MIN TYP MAX UNITS CONDITIONS Pout Pin Power Input Vcc = 28 Volts 6.0 Watts Pg ηc VSWR Power Out F = 1200-1400 MHz 30 Watts Power Gain Pulse Width = 2 ms 7.0 dB Collector Efficiency Duty = 20% 48 % Load Mismatch Tolerance Rated Conditions 3:1 BVces BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 Volts Hfe Cob θjc Collector to Emitter Breakdown Ic = 50 mA 50 Volts DC Current Gain Vce=5 V, Ic =500mA 20 Output Capacitance* F=1 MHz, Vcb=28V pF Thermal Resistance Rated Pulse Condition 2.0 C/W o * Not measureable due to internal prematch network IssueA July 1997