IMZ120R045M1 INFINEON | Alldatasheet

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Technical content

Features

 Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Easy to use/drive due to sense (driver) source pin for better control of the gate  Temperature independent turn-off switching losses Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar string inverter and solar optimizer  Industrial power supplies o Industrial UPS o Industrial SMPS  Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type VDS ID (TC = 25°C, Rth(j-c,max)) RDS(on) (Tvj = 25°C, ID = 20A, VGS = 15V) Tj,max Marking Package IMZ120R045M1 1200V 52A 45mΩ 175°C 120M1045 PG-TO247-4 Drain pin 1 Source pin 2 Gate pin 4 Sense pin 3

Datasheet 2 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET 1200V SiC Trench MOSFET Table of contents Table of contents

Datasheet 3 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings

1 Maximum ratings

For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 15V, TC = 25°C TC = 100°C ID A Pulsed drain current, tp limited by Tvjmax, VGS = 15V ID,pulse1 130 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD 52 A Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 130 A Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommend turn-on gate voltage Recommend turn-off gate voltage VGSS VGSS,on VGSS,off -10… 20 V Short-circuit withstand time VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C tSC 3 µs Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 228 114 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 1 verified by design 2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime.

Datasheet 4 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances

2 Thermal resistances

Parameter Symbol Conditions Value Unit min. typ. max. MOSFET/body diode thermal resistance, junction – case Rth(j-c) - 0.51 0.66 K/W Thermal resistance, junction – ambient Rth(j-a) leaded - - 62 K/W

Datasheet 5 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET

Electrical Characteristics

3 Electrical Characteristics

3.1 Static characteristics

Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Drain-source on-state resistance RDS(on) VGS = 15V, ID = 20A, Tvj = 25°C Tvj = 100°C Tvj = 175°C mΩ Body diode forward voltage VSD VGS = 0V, ISD = 20A Tvj = 25°C Tvj = 100°C Tvj = 175°C 4.1 4.0 3.9 5.2 V Gate-source threshold voltage VGS(th) (tested after 1 ms pulse at VGS = 20V) ID = 10mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 4.5 3.6 5.7 V Zero gate voltage drain current IDSS VGS = 0V, VDS = 1200V Tvj=25°C Tvj=175°C 200 µA Gate-source leakage current IGSS VGS = 20V, VDS = 0V - - 120 nA VGS = -10V, VDS = 0V - - -120 nA Transconductance gfs VDS = 20V, ID = 20A - 11.1 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 4 - Ω

Datasheet 6 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET

3.2 Dynamic characteristics

Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Input capacitance Ciss VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV - 1900 - pF Output capacitance Coss - 115 - Reverse capacitance Crss - 13 - Coss stored energy Eoss - 44 - µJ Total gate charge QG VDD = 800V, ID = 20A, VGS = 0/15V, turn-on pulse - 52 - nC Gate to source charge QGS,pl - 15 - Gate to drain charge QGD - 13 -

Datasheet 7 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET

3.3 Switching characteristics

Table 6 Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value Unit min. typ. max. MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) VDD = 800V, ID = 20A, VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 9 - ns Rise time tr - 18 - Turn-off delay time td(off) - 17 - Fall time tf - 13 - Turn-on energy Eon - 280 - µJ Turn-off energy Eoff - 70 - Total switching energy Etot - 350 - Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr VDD = 800V, ISD = 20A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C - 0.15 - µC Diode peak reverse recovery current Irrm - 8 - A MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) VDD = 800V, ID = 20A, VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 9 - ns Rise time tr - 18 - Turn-off delay time td(off) - 20 - Fall time tf - 14 - Turn-on energy Eon - 300 - µJ Turn-off energy Eoff - 75 - Total switching energy Etot - 375 - Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr VDD = 800V, ISD = 20A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C - 0.25 - µC Diode peak reverse recovery current Irrm - 10 - A 4 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package.

Datasheet 8 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams

4 Electrical characteristic diagrams

Figure 1 Reverse bias safe operating area (RBSOA) (Vgs = 0/15V, Tc = 25°C, Tj < 175°C) Figure 2 Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) Figure 3 Maximum DC drain to source current as a function of case temperature limited by bond wire (IDS = f(TC)) Figure 4 Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V)

Datasheet 13 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 21 Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 0.01 0.10 1.00 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 Zthjc [K/W] tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse i: 1 2 3 4

Datasheet 14 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Package drawing

5 Package drawing

Datasheet 15 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Test conditions

6 Test conditions

Datasheet 16 of 17 2.6 2020-12-11 IMZ120R045M1 1200V SiC Trench MOSFET

Revision history

Major changes since the last revision Document version Date of release Description of changes 2.1 2018-03-01 Initial version 2.2 2018-05-30 Important footnote update in chapter 1 Change of conditions for switching dynamic characteristics in chapter 3.2 and 3.3 Additional figures for VGS=0V/15V in chapter 4 2.3 2019-04-18 Add Recommended gate voltage in charpter 1 Add SOA figure in chapter 4 Remove figures for VGS=-5V/15V in chapter 4 2.4 2019-12-10 Move the short circuit time from dynamic characteristics table 5 to maximum ratings table 2. Update the Figure 21 Zth curve. 2.5 2020-06-12 Correction of marking letters in table 1 2.6 2020-12-11 Correction of circuit symbol on page 1

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