11N65FJHD2 SILAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 1 of 8 NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS denote Multilayer epitaxial process Nominal current, using 1 or 2 digits: Example:4 denotes 4A Nominal Voltage, using 2 digits Example:60 denotes 600V,65 denotes 650V. Packageinformation.Examp:F:TO-220F. S V S P X N E X X X X X X N denotes N Channel Special Features indication, May be omitted. Example: E denotes embedded ESD structure Specification mark, distinguish different gate oxygen thickness and different versions of products. It is usually default. Process breakdown logo D2: second generation process, EMI version; E2: second generation, fast switching version Process Version, P denotes PASSIVATION
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVS11N65FJHD2 TO-220FJH-3L 11N65FJHD2 Halogen free Tube 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using S ilan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example . it is suitable for hard and soft switching topologies.
FEATURES
11A,650V, RDS(on)(typ.)=0.33@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 1.Gate 2.Drain 3.Source TO-220FJH-3L 2 3
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 2 of 8 ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current TC=25° C ID A TC=100°C 7 Drain Current Pulsed IDM 44 A Power Dissipation(TC=25C) -Derate above 25C PD 35 W
0.28 W/C
Single Pulsed Avalanche Energy (Note 1) EAS 250 mJ Body diode (Note 2) dv/dt 15 V/ns MOSFET dv/dt ruggedness (Note 3) dv/dt 50 V/ns Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 3.57 C/W Thermal Resistance, junction-to-Ambient RθJA 62.5 C/W
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 3 of 8 ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 650 -- -- V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 4.0 V Static Drain-Source On State Resistance RDS(on) VGS=10V, ID=5.5A -- 0.33 0.4 Gate resistance Rg f=1MHz -- 5.2 -- Input Capacitance Ciss f=1MHz,VGS=0V, VDS=100V -- 632 -- pF Output Capacitance Coss -- 37 -- Reverse Transfer Capacitance Crss -- 2.3 -- Turn-on Delay Time td(on) VDD=325V,VGS=10V, R G=24Ω, ID=11A (Notes 4,5) -- 12 -- ns Turn-on Rise Time tr -- 35 -- Turn-off Delay Time td(off) -- 64 -- Turn-off Fall Time tf -- 31 -- Total Gate Charge Qg VDD=520V, VGS=10V, ID=11A ( Notes 4,5) -- 23 -- nC Gate-Source Charge Qgs -- 5.3 -- Gate-Drain Charge Qgd -- 11 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 11 A Pulsed Source Current ISM -- -- 44 Diode Forward Voltage VSD IS=11A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=11A,VGS=0V, dIF/dt=100A/µs (Note 4) -- 361 -- ns Reverse Recovery Charge Qrr -- 3.9 -- µC Notes: 1. L=79mH,IAS=2.4A,VDD=100V, RG=25, starting TJ=25C; 2. VDS=0~400V，ISD<=11A, TJ=25C； 3. VDS=0~480V； 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 5. Essentially independent of operating temperature.
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 6 of 8 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE TO-220FJH-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.800.55 1.29 0.650.35 0.50 16.2515.25 15.87 13.2712.87 13.07 12.6812.28 12.48 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 3.403.00 3.18 3.553.05 3.30 0.70 0.85 Important notice : The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor produc t under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause per sonal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export con trol laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
SVS11N65FJHD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 8 of 8 Part No.: SVS11N65FJHD2 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.1 Revision History: 1. Update Electrical schematic 2. Update Fig 5 3. Update TYPICAL TEST CIRCUIT 4. Update important notice Rev.: 1.0 Revision History: 1. First release