10DL2C41A TOSHIBA | Alldatasheet
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TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION io3Max, 436402 132 Repetitive Peak R Volt Vv. 200V Saya p e : = = petitive Peak Reverse Voltage : VRRM ] ag @ Average Output Rectified Current : I9=10A 4 3 x) 2 @ Ultra Fast Reverse-Recovery Time : tpyy=35ns | 5 2 I. 7 a3 z MAXIMUM. RATINGS 076 2 | | CHARACTERISTIC SYMBOL UNIT | “| fees calle Repetitive Peak Reverse Voltage | Vamm [200 |v [] 2ste05 asec x Average Output Rectified Current A ee (Tc=116°C) < Peak One Cycle Surge Forward I HL: A Current (Non Repetitive) sm | 50(60H2) J ANODE Junction Temparature —40~150 3. CATHODE Storage Temparature Range JEDEC __TO-220AB [ Serew Torque | Tm Jf rAS = TOSHIBA = 12-10E1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 2.0g CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage (ote) | Vem [TeM=sA___———S~d | ome] Repetitive Peak Reverse Current Resim Te [vee = | | Reverse Recovery time (Note 0 Tpe2A, das —20ATs | — | 85] ae Forward Reoovery time (Note) [vp IF=10A SS) | 100 | as | Thermal Resistance DC Total, Junction to Case [ — [ 30 [°c/w] Note 1: A value of one cell. MARKING POLARITY i pe foa ® ©) laeecy ee Lot Number eaten oo- Month (Starting from Alphabet A) y i h Year (Last Number of the Christian Era) 261001 a2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1996-12-02 1/2
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