10AM20 NJSEMI | Alldatasheet
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New Jersey Semi-Conductor Products, Ine. FO . 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
20 Watts, 20 Volts, Class A
GENERAL DESCRIPTION CASE OUTLINE The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is SSAT, STYLE 2 specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C 63 Watts < <> Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts SN Ba BVebo Emitter to Base Voltage 3.5 Volts Y Ie Collector Current 5.5 Amps <r Maximum Temperatures Storage Temperature - 65 to + 200°C Operating Junction Temperature + 200°C SEE NOTE BELOW ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL | CHARACTERISTICS TEST CONDITIONS [ ew | tye | max | UNITS Pout Power Out F = 1.0GHz 20 24 Watts Pin Power Input Ic =2.8A 3.0 | 4.5 | Watts Pg Power Gain Vec = 20 Volts 6.5 7.0 dB Ft Transition Frequency Vee = 22 V, Ic=2.8 A GHz VSWR Load Mismatch Tolerance 3:1 BVebo _| Emitter to Base Breakdown Ie=15 mA 3.5 Volts BVces Collector to Emitter Breakdown | Ic= 180 mA 50 Volts BVceo Collector to Emitter Breakdown | Ic = 180 mA 24 Volts Hye DC Current Gain Vee =5V,Ic=1.0A 20 40 Cob Output Capacitance Veb = 28V, f=1.0 MHz pF @jc Thermal Resistance 12 15 | °cw Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting area, refer to SSAW. s Quality Semi-Conductors