FFM101-M-F HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● FFM101-M - FFM104-M : F2 H igh Diode Semiconductor Notes: pad areas SOD-1 23FL FFM105-M : F5 FFM106-M - FFM107-M : F7 FFM101-M THRU FFM107-M Between junction and ambient 105 Between junction and terminal 32 FFM 101-M 102-M 103-M 104-M 105-M 106-M 107-M FFM 101-M 102-M 103-M 104-M 105-M 106-M 107-M 35 70 140 280 420 560 700 Maximum RMS V RMS V Voltage
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 100 0.2 0.4 0.6 0.8 1.0 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=150 Tj=100 0.01 0 20 40 60 80 100 0.1 1.0 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) NumberofCycles 8.3msSingle Half Sine Wave JEDECMethod 1 2 10 20 1005
H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL
Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL