BSZ0909ND INFINEON | Alldatasheet

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Technical content

Features

  • DualN-channelOptiMOS™MOSFET
  • Enhancementmode
  • Logiclevel(4.5Vrated)
  • Avalancherated
  • 100%Lead-free;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 18 mΩ ID 20 A QOSS 2.3 nC QG(0V..4.5V) 1.8 nC Type/OrderingCode Package Marking RelatedLinks BSZ0909ND PG-WISON-8 0909ND -

Rev.2.0,2016-12-05Final Data Sheet TableofContents

Rev.2.0,2016-12-05Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 8.1 5.5 4.1 A VGS=10V,TC=25°C VGS=10V,TA=25°C1) VGS=4.5V,TA=70°C1) VGS=4.5V,TA=25°C2) Pulsed drain current3) ID,pulse - - 40 A TC=25°C Avalanche energy, single pulse EAS - - 4 mJ ID=9A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 1.9 - W TC=25°C TA=25°C,RthJA=65°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 7.5 °C/W - Device on PCB, minimal footprint RthJA - - 180 °C/W - Device on PCB, 6 cm2 cooling area RthJA - - 65 °C/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) device mounted on a minimum pad (one layer, 70 µm thick) 3) See Diagram 3 for more detailed information

Rev.2.0,2016-12-05Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 14.5 18 mΩ VGS=4.5V,ID=9A VGS=10V,ID=9A Gate resistance1) RG 3.5 7 14 Ω - Transconductance gfs - 22 - S |VDS|>2|ID|RDS(on)max,ID=9A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 270 360 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 88 120 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 11 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Rise time tr - 2.5 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Turn-off delay time td(off) - 15 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Fall time tf - 2 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.8 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge at threshold Qg(th) - 0.4 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate to drain charge Qgd - 0.5 - nC VDD=15V,ID=9A,VGS=0to4.5V Switching charge Qsw - 0.8 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 1.8 2.6 nC VDD=15V,ID=9A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 3.7 5.2 nC VDD=15V,ID=9A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 1.5 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 2.3 - nC VDD=15V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

Rev.2.0,2016-12-05Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 17 A TC=25°C Diode pulse current IS,pulse - - 40 A TC=25°C Diode forward voltage VSD - 0.92 1.2 V VGS=0V,IF=9A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=9A,diF/dt=400A/µs

Rev.2.0,2016-12-05Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TA[°C] Ptot[W] 120 160 0.0 0.2 0.4 0.6 0.8 Ptot=f(TA),minimalfootprint Diagram2:Draincurrent TA[°C] ID[A] 120 160 10 V 4.5 V ID=f(TA),minimalfootprint;parameter:VGS Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[°C/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

Rev.2.0,2016-12-05Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 4.5 V 5 V 10 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 3.5 V 4 V 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] gfs=f(ID);Tj=25°C

Rev.2.0,2016-12-05Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=9A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances VDS[V] C[pF] 100 101 102 103 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 101 102 25 °C 150 °C IF=f(VSD);parameter:Tj

Rev.2.0,2016-12-05Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 15 V 6 V 24 V VGS=f(Qgate);ID=9Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

Rev.2.0,2016-12-05Final Data Sheet 5PackageOutlines Figure1OutlinePG-WISON-8,dimensionsinmm/inches

Rev.2.0,2016-12-05Final Data Sheet RevisionHistory BSZ0909ND Revision:2016-12-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-05 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.