BSZ065N03LS INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 11
Technical content
Industrial & Multimarket Data Sheet 2.1, 2011-09-21 Final OptiMOS™ BSZ065N03LS n-Channel Power MOSFET
OptiMOS™ Power-MOSFET BSZ065N03LS Final Data Sheet 1 2.1, 2011-09-21 8 D 7 D 6 D 5 D S 1 S 2 S 3 G 4
1 Description
OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requiremen ts of the sharpened next generation voltage regulation standards in computing applications.
Features
- Optimized for high performance buck converters (Server, VGA)
- 100% avalanche tested
- Very low on-resistance R DS(on) @ VGS=4.5V
- Excellent gate charge x R DS(on) product (FOM)
- V e r y l o w F O MQOSS for high frequency SMPS
- V e r y l o w F O MSW for high frequency SMPS
- Qualified according to JEDEC 1) for target applications
- N-channel
- Superior thermal resistance
- Pb-free plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Applications
- On board power for server
- Power managment for high performance computing
- Synchronous rectification
- High power density point of load converters 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 30 V IFX OptiMOS webpage RDS(on),max 6.5 m Ω IFX OptiMOS product brief ID 40 A IFX OptiMOS spice models QOSS 6.9 nC IFX Design tools Qg.typ 10 Type Package Marking BSZ065N03LS PG-TSDSON-8 (fused leads) 065N03L
OptiMOS™ Power-MOSFET BSZ065N03LS Final Data Sheet 2 2.1, 2011-09-21
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current ID -- 4 0 A VGS=10 V, TC=25 °C -- 3 1 VGS=10 V, TC=100 °C -- 4 0 VGS=4.5 V, TC=25 °C -- 2 7 VGS=4.5 V, TC=100 °C -- 1 2 VGS=4.5 V, TA=25 °C, RthJA=60 K/W) Pulsed drain current1) 1) See figure 3 for more detailed information ID,pulse -- 1 6 0 TC=25 °C Avalanche current, single pulse2) 2) See figure 13 for mo re detailed information IAS -- 2 0 Avalanche energy, single pulse EAS -- 1 6 m J ID=20 A,RGS=25 Ω Gate source voltage VGS -20 - 20 V Power dissipation Ptot -- 2 6 W TC=25 °C -- 2 . 1 TA=25 °C, RthJA=60 K/W) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 4 . 9 K / W Device on PCB RthJA -- 6 0 6 c m 2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air
OptiMOS™ Power-MOSFET BSZ065N03LS
Electrical characteristics
Final Data Sheet 3 2.1, 2011-09-21
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0 V, ID=1.0 mA Gate threshold voltage VGS(th) 1.2 - 2 VDS=VGS, ID=250 µA Zero gate voltage drain current IDSS -0 . 1 1µ A VDS=30 V, VGS=0 V, Tj=25 °C - 10 100 VDS=30 V, VGS=0 V, Tj=125 °C Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -6 . 9 8 . 6 m Ω VGS=4.5 V, ID=20 A -5 . 4 6 . 5 VGS=10 V, ID=20 A Gate resistance RG 0.5 1.0 2.0 Ω Transconductance gfs 34 67 - S | VDS|>2|ID|RDS(on)max, ID=30 A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss -6 7 0 - p F VGS=0 V, VDS=15 V, f=1 MHzOutput capacitance Coss -2 7 0 - Reverse transfer capacitance Crss -4 0 - Turn-on delay time td(on) -2 . 5 - n s VDD=15 V, VGS=10 V, ID=30 A, RG=1 . 6 ΩRise time tr -3 . 4 - Turn-off delay time td(off) -1 2 - Fall time tf -2 . 4 -
OptiMOS™ Power-MOSFET BSZ065N03LS Final Data Sheet 4 2.1, 2011-09-21 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -1 . 9 - n C VDD=15 V, ID=30 A, VGS=0 to 4.5 VGate charge at threshold Qg(th) -1 . 1 - Gate to drain charge Qgd -1 . 7 - Switching charge Qsw -2 . 6 - Gate charge total Qg -5 . 2 - Gate plateau voltage Vplateau -2 . 9 - V Gate charge total Qg -1 0 - n C VDD=15 V, ID=30 A, VGS=0 to 10V Gate charge total, sync. FET Qg(sync) -4 . 2 - VDS=0.1 V, VGS=0 to 4.5 V Output charge Qoss -6 . 9 - VDD=15 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode continuous forward current Is -- 2 6 A TC=25 °C Diode pulse current IS,pulse -- 1 0 4 Diode forward voltage VSD -0 . 8 9 1V VGS=0 V, IF=20 A, Tj=25 °C Reverse recovery charge Qrr -1 0 - n C VR=15 V, IF=Is, diF/dt=400 A/µs
OptiMOS™ Power-MOSFET BSZ065N03LS Electrical characteristics diagrams Final Data Sheet 5 2.1, 2011-09-21
5 Electrical characteristics diagrams
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET BSZ065N03LS Electrical characteristics diagrams Final Data Sheet 6 2.1, 2011-09-21 Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET BSZ065N03LS Electrical characteristics diagrams Final Data Sheet 7 2.1, 2011-09-21 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET BSZ065N03LS Electrical characteristics diagrams Final Data Sheet 8 2.1, 2011-09-21 Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
OptiMOS™ Power-MOSFET BSZ065N03LS Package outlines Final Data Sheet 9 2.1, 2011-09-21
6 Package outlines
Figure 1 Outlines PG-TSDSON-8 (fused Leads), dimensions in mm/inches
OptiMOS™ Power-MOSFET BSZ065N03LS
Revision History
Final Data Sheet 10 2.1, 2011-09-21
7 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-09-21 Published by Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2011-09-21, 2.1 Previous Revision: Revision Subjects (major ch anges since last revision)