IQE065N10NM5 INFINEON | Alldatasheet

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Technical content

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.rec.
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 6.5 mΩ ID 85 A Qoss 40 nC QG(0V..10V) 34 nC Type/OrderingCode Package Marking RelatedLinks IQE065N10NM5 PG-TSON-8-4 06510N5 -

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet TableofContents

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60°C/W2) Pulsed drain current3) ID,pulse - - 341 A TA=25°C Avalanche energy, single pulse4) EAS - - 147 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 100

2.5 W TC=25°C

TA=25°C,RthJA=60°C/W3) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - 0.8 1.5 °C/W - Device on PCB, 6 cm² cooling area2) RthJA - - 60 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=48µA Zero gate voltage drain current IDSS 0.1 1.0 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 5.7 7.2 6.5 11 mΩ VGS=10V,ID=20A VGS=6V,ID=10A Gate resistance RG - 0.6 - Ω - Transconductance gfs - 55 - S |VDS|≥2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 2300 3000 pF VGS=0V,VDS=50V,f=1MHz Output capacitance1) Coss - 340 440 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance1) Crss - 18 32 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 8.9 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Rise time tr - 3.8 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Turn-off delay time td(off) - 21.1 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Fall time tf - 7.5 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 10.1 - nC VDD=50V,ID=20A,VGS=0to10V Gate charge at threshold Qg(th) - 6.8 - nC VDD=50V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 7.4 11 nC VDD=50V,ID=20A,VGS=0to10V Switching charge Qsw - 10.7 - nC VDD=50V,ID=20A,VGS=0to10V Gate charge total1) Qg - 34 42 nC VDD=50V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 29 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 40 54 nC VDS=50V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 74 A TC=25°C Diode pulse current IS,pulse - - 341 A TC=25°C Diode forward voltage VSD - 0.83 1.1 V VGS=0V,IF=20A,Tj=25°C Reverse recovery time1) trr - 36 72 ns VR=50V,IF=20A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 40 80 nC VR=50V,IF=20A,diF/dt=100A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 120 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 350 10 V 8 V 7 V 6 V 5 V 4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 125 150 175 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 300 350 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 175 °C 25 °C RDS(on)=f(VGS),ID=20A;parameter:Tj

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 RDS(on)=f(Tj),ID=20A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 480 µA 48 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 20 V 50 V 80 V VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 200 100 102 104 106 108 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet 5PackageOutlines 0.65 MILLIMETERSDIMENSION- 1.10AcDe 0.20MIN.MAX. 3.303.30 10 2mm01 ISSUE DATE06.11.2019 DOCUMENT NO.Z8B00198723 EUROPEAN PROJECTION REVISION - 0.05A1 L60.770.97L40.260.46 Figure1OutlinePG-TSON-8-4,dimensionsinmm

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet 1.140.357x 0.656x1.11.151.23 0.08 1.605 1.65 Pin 1Pin 1copper0.451.0150.352x0.543x Figure2OutlineBoardpad(PG-TSON-8-4)

OptiMOSTM5Power-Transistor,100V IQE065N10NM5 Rev.2.1,2021-12-01Final Data Sheet RevisionHistory IQE065N10NM5 Revision:2021-12-01,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-04-27 Release of final version 2.1 2021-12-01 Update "Marking" and Gate resistance Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2021InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.