033R5NT SILAN | Alldatasheet
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Technical content
SVT033R5NT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 1 of 7 180A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-220-3L 1 23
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT033R5NT TO-220-3L 033R5NT Pb free Tube ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V Drain Current TC=25° C ID 180 A TC=100°C 114 Drain Current Pulsed IDM 720 A Power Dissipation (TC=25C) -Derate above 25C PD 171.2 W
1.14 W/C
Single Pulsed Avalanche Energy (Note 1) EAS 404 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C
SVT033R5NT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 2 of 7 THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 0.73 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 30 -- -- V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 1 -- 3 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=50A -- 2.8 3.5 m VGS=4.5V, ID=40A -- 5 6.5 m Gate Resistance RG f=1MHz -- 2.8 -- Input Capacitance Ciss f=1MHz,VGS=0V,VDS=15V -- 5412 -- pF Output Capacitance Coss -- 1010.6 -- Reverse Transfer Capacitance Crss -- 641.7 -- Turn-on Delay Time td(on) VDD=20V, VGS=10V, RG= 6Ω, ID=50A (Notes 2,3) -- 11.9 -- ns Turn-on Rise Time tr -- 77 -- Turn-off Delay Time td(off) -- 308.9 -- Turn-off Fall Time tf -- 193.6 -- Total Gate Charge Qg VDD=24V, VGS=10V, ID=50A (Notes 2,3) -- 113.5 -- nC Gate-Source Charge Qgs -- 14.6 -- Gate-Drain Charge Qgd -- 24.8 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 180 A Pulsed Source Current ISM -- -- 720 Diode Forward Voltage VSD IS=150A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=25A,VGS=0V, dIF/dt=100A/µs -- 51.7 -- ns Reverse Recovery Charge Qrr -- 0.04 -- µC Notes: 1. L=0.5mH, VDD=24V, RG=25,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT033R5NT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 5 of 7 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT033R5NT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 6 of 7 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 Important notice : The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specifi c conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
SVT033R5NT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 7 of 7 Part No.: SVT033R5NT Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.2 Revision History: 1. Update Electrical schematic and TYPICAL TEST CIRCUIT 2. Update important notice Rev.: 1.1 Revision History: 1. Add Fig 10 Rev.: 1.0 Revision History: 1. First release