0105-100 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 0105-100
100 Watts, 28 Volts, Class AB
The 0105-100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and high reliability. CASE OUTLINE 55JT, Style 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 270 Wattso Maximum Voltage and Current BVces Collector to Emiter Voltage 65 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 16 A Maximum Temperatures Storage Temperature - 40 to +150 C o Operating Junction Temperature +200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance F = 500 MHz Vcc = 28 Volts 100 6.2 7.5 5:1 Watts Watts dB BVebo BVces BVceo Cob hFE θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 100 mA Ie = 50 mA Vcb = 28 V, F = 1 MHz Vce = 5 V, Ic = 500 mA 4.0 140 0.65 Volts Volts Volts pF C/W o Note 2: Both sides together, all other specifications each side tested separately Issue August 1996