EMX18_1 ROHM
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Rev.A 1/3 General purpose transistors (dual transistors) EMX18 / UMX18N zFeatures 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. zEquivalent circuit EMX18 / UMX18N (3) (2) (1) (4) (6)(5) Tr2 Tr1 zExternal dimensions (Unit : mm) ROHM : EMT6 EMX18 ROHM : UMT6 EIAJ : SC-88 UMX18N Abbreviated symbol : X18 Abbreviated symbol : X18 Each lead has same dimensions Each lead has same dimensions 0~0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 zAbsolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗1 120mW per element must not be exceeded. Parameter Symbol Limits Unit VCBO 15 V 12 V V VCEO VEBO 6 ICP A1.0 IC mA500 Tj 150 ˚C Tstg −55 to +150 ˚C Pd 150 (TOTAL) mW ∗1
Rev.A 2/3 zElectrical characteristics (Ta=25°C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Cob Min. 270 7.5 0.1 0.1 680 250 VI C=10µA IC=1mA IE=10µA VCB=15V VEB=6V VCE=2V, IC=10mA IC/IB=200mA/10mA V V µA µA mV PF Typ. Max. Unit Conditions fT − 320 − VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance zPackaging specifications Package Code TN 3000 Taping Basic ordering unit (pieces) UMX18N T2R 8000 EMX18 Type zElectrical characteristic curves BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (mA) 100 0.5 1.0 1.5 VCE = 2V1000 Ta = 125 -40 200 500 1 2 5 10 20 50 100 200 500 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current DC CURRENT GAIN : hFE 1000 100 200 500 1000 Ta = 125°C VCE = 2V 25°C -40°C 100 200 IC/IB = 20 1 2 5 10 20 50 100 200 500 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta = 125°C 500 1000 25°C -40°C
Rev.A 3/3 100 200 Ta = 25°C 1 2 5 10 20 50 100 200 500 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) IC/IB = 50 500 1000 100 200 500 1000 2000 IC/IB = 20 1 2 5 10 20 50 100 200 500 1000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.5 Base-emitter saturation voltage vs. collector current Ta = -40°C5000 10000 25°C 125°C 21 5 10 20 50 100 200 500 1000 100 200 500 1000 Ta = 25°C VCE = 2V fT (MHZ) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage Pulsed 0.20.1 0.5 1 2 5 10 20 50 100 100 200 500 1000 Ta = 25°C IE = 0A f = 1MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage Cib Cob
Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.