FMN1 ROHM
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FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / Diodes UMN1N / UMP1N / UMN11N / UMP11N Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !Applications Ultra high speed switching !Features 1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. !Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) 2.8±0.2 1.6 2.9±0.2 1.9±0.2 0.95 0.3 0.15 0∼0.1 1.1 0.8±0.10.95 0.3∼0.6 −0.1 +0.2 +0.1 −0.05 +0.1 +0.2 −0.1 −0.06 0∼0.1 2.0±0.2 1.3±0.1 0.65 0.65 1.25±0.1 2.1±0.1 +0.1 −0.050.2 0.15±0.05 0.1Min. 0.7 0.9±0.1 FMN1 / FMP1 UMN1N / UMP1N IMN10 / IMN11 / IMP11 UMN11N / UMP11N 2.8±0.2 1.6 2.9±0.2 1.9±0.2 0.95 0.3 0.15 0∼0.1 1.1 0.8±0.10.95 0.3∼0.6 −0.1 +0.2 +0.1 −0.05 +0.1 +0.2 −0.1 −0.06 0∼0.1 2.0±0.2 1.3±0.1 0.65 0.65 1.25±0.1 2.1±0.1 +0.1 −0.050.2 0.15±0.05 0.1Min. 0.7 0.9±0.1 EIAJ : SC-74A JEDEC : − ROHM : SMD5 EIAJ : SC-88A JEDEC : SOT-353 ROHM : UMD5 EIAJ : SC-74 JEDEC : SOT-457 ROHM : SMD6 ∗ ∗ FMP1 : P1 FMN1 : N1 ∗Marking UMP1N : P1 UMN1N : N1 ∗Marking EIAJ : SC-88 JEDEC : SOT-363 ROHM : UMD6 UMP11N : P11 UMN11N : N11 ∗Marking IMN11 : N11 IMP11 : P11 IMN10 : N10 ∗Marking (All leads have the same dimensions.) (All leads have the same dimensions.) (All leads have the same dimensions.) (All leads have the same dimensions.) !!!!Circuit FMN1 FMP1 IMN10 SMD5 / SMD6 Package UMD5 / UMD6 Package UMN1N UMP1N UMN11N UMP11N IMN11 IMP11
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / Diodes UMN1N / UMP1N / UMN11N / UMP11N !!!!Absolute maximum ratings (Ta=25°C) ∗1 Not to exceed 200mW per element. ∗2 Not to exceed 120mW per element. Type VR (V) IFM (mA) Pd (mW) UMN1N 80 80 80 25 0.25 150 FMP1 UMP1N 80 80 80 25 0.25 150 −55∼+150 IMN10 80 80 300 100 4 150 −55∼+150 80 80 300 100 4 150 −55∼+150 80 80 300 100 4 150 −55∼+150 −55∼+150FMN1 300 ∗1 150 ∗2 150 ∗2 UMN11N IMN11 UMP11N IMP11 VRM (V) (1µs) (TOTAL) IO (mA) Isurge (A) Peak reverse voltage DC reverse voltage Tj (˚C) Tstg (˚C) Peak forward current Mean rectifying current Surge current Power dissipation Junction temperature Storage temperature !!!!Electrical characteristics (Ta=25°C) Type Cond.VF (V) Max. Cond. Cond. Max. Cond. CT (pF) Max.Max.IF (mA) VR (V) I F (mA)VR (V) f (MHz)VR (V) FMN1 UMN1N 0.9 5 0.1 70 3.5 6 1 4 6 5 FMP1 UMP1N 0.9 5 0.1 70 3.5 6 1 4 6 5 IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5 1.2 100 0.1 70 3.5 6 1 4 6 5 1.2 100 0.1 70 3.5 6 1 4 6 5 trr (ns)IR (µA) UMN11N IMN11 UMP11N IMP11 Forward voltage Reverse recovery timeReverse current Capacitance between terminals !!!!Electrical characteristic curves (T a=25°C) 125 100 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (˚C) POWER DISSIPATION : Pd / PdMax. (%) Fig.1 Power reduction curve Ta=25˚C −30 0.1 0.2 0.5 0˚C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) Fig. 2 Forward current vs. forward voltage (P Type) Ta=100˚C 75˚C 50˚C 25˚C 0˚C −25˚C 1 000 100 1.0 0.1 0.01 10 20 30 40 50 REVERSE CURRENT : IR (nA) REVERSE VOLTAGE : VR (V) Fig.3 Reverse current vs. reverse voltage (P Type)
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / Diodes UMN1N / UMP1N / UMN11N / UMP11N Ta=25˚C −30 0.1 0.2 0.5 0˚C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) Fig.4 Forward current vs. forward voltage (N Type) Ta=100˚C 75˚C 50˚C 25˚C 0˚C −25˚C 1 000 100 1.0 0.1 0.01 10 20 30 40 50 REVERSE CURRENT : IR (nA) REVERSE VOLTAGE : VR (V) Fig.5 Reverse current vs. reverse voltage (N Type) 2468 1 0 1 2 1 4 1 6 N Type Ta=25˚C f=1MHz P Type CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig.6 Capacitance between terminals vs. reverse voltage P Type N Type Ta=25˚C VR=6V 123456789 1 0 REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : IF (mA) Fig.7 Reverse recovery time vs. forward current PULSE GENERATOR OUTPUT 50Ω SAMPLING OSCILLOSCOPE50Ω 5kΩ 0.01µF 100ns IR 0.1IR trrOUTPUT INPUT D.U.T. Fig.8 Reverse recovery time (trr) measurement circuit