Summary
Extremely high dv/dt capability 21-Feb-2011
Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
Source title
STD6N52K3 Datasheet(PDF) - STMicroelectronics