Datasheet - STD60NF06T4 - N-channel 60 V, 0.014 Ω typ., 60 A STripFET II Power MOSFET in a DPAK package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 18
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 DPAK (TO-252) type A2 package information
- 4.2 DPAK (TO-252) type C2 package information
- 4.3 DPAK (TO-252) footprint information
- 4.4 DPAK (TO-252) packing information
Features
Order code VDS RDS(on) max. ID STD60NF06T4 60 V 0.016 Ω 60 A
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
Description
This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD60NF06T4 Product summary Order code STD60NF06T4 Marking D60NF06 Package DPAK Packing Tape and reel N-channel 60 V, 0.014 Ω typ., 60 A STripFET II Power MOSFET in a DPAK package STD60NF06T4 Datasheet DS12568 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data
- When mounted on 1 inch² FR-4, 2 Oz copper board.
2 Electrical characteristics
TCASE = 25 °C unless otherwise specified Table 3. On-/off-states
- Defined by design, not subject to production test.
Table 4. Dynamic Table 5. Switching times Figure 16. Switching time Table 6. Source-drain diode
Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 60 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C (see Figure 13. Test circuit for inductive load switching and diode recovery times) - 73 ns Qrr Reverse recovery charge - 182 nC IRRM Reverse recovery current - 5 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% STD60NF06T4
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on-resistance Figure 6. Gate charge vs gate-source voltage
3 Test circuits
Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior Figure 13. Test circuit for inductive load switching and Figure 14. Unclamped inductive load test circuit Figure 15. Unclamped inductive waveform Figure 16. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STD60NF06T4
Package information
4.1 DPAK (TO-252) type A2 package information
Figure 17. DPAK (TO-252) type A2 package outline
Table 7. DPAK (TO-252) type A2 mechanical data
4.2 DPAK (TO-252) type C2 package information
Figure 18. DPAK (TO-252) type C2 package outline
Table 8. DPAK (TO-252) type C2 mechanical data
4.3 DPAK (TO-252) footprint information
Figure 19. DPAK (TO-252) recommended footprint (dimensions are in mm)
4.4 DPAK (TO-252) packing information
Figure 20. DPAK (TO-252) tape outline
Figure 21. DPAK (TO-252) reel outline Table 9. DPAK (TO-252) tape and reel mechanical data
Revision history
Table 10. Document revision history 03-May-2018 1 Initial release.