SSR1510S.5 SSDI

Document overview

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Technical content

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET SMD.5 SSR1510 __ __ └ Screening 2/ __ = Commercial TX = TX Level TXV = TXV Level S = S Level └ Package: S.5 = SMD.5 SSR1510S.5

15 AMP /100 Volts

Features:

  • Extremely Low Forward Voltage Drop
  • Low reverse leakage
  • Excellent high temperature performance
  • Hermetically Sealed, low thermal resistance power Package
  • Eutectic die attach and monometallic contacts for improved reliability
  • Replacement for 15LJQ100 types
  • TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current IO 15 A Peak Surge Current 8.3 ms pulse, half sinewave superimposed on Io; allow junction to reach equilibrium in between pulses; Ta= 25ºC IFSM 250 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) R0JC 2.25 ºC/W PACKAGE OUTLINE: SMD.5 PINOUT: PIN 1: CATHODE PIN 2: ANODE PIN 3: ANODE .135 .115 .304 .288 .408 .392 .304 .288 3x .020 .010 .030 MIN .128 .112 .233 .217 2x .010 MAX 2x .103 .087.030 MIN NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0034A DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR1510S.5 Electrical Characteristics 4/ Symbol Min Typ Max Units Instantaneous Forward Voltage Drop IF = 1 A IF = 5 A IF = 10 A IF = 15 A VF1 VF2 VF3 VF4 460 600 710 850 635 890 mV Instantaneous Forward Voltage Drop, Tc= 125 oC IF = 5 A IF = 15 A VF5 VF6 –– 500 675 520 700 mV Instantaneous Forward Voltage Drop, Tc= -55 oC IF = 5 A IF = 15 A VF7 VF8 –– 625 825 –– mV Reverse Leakage Current VR = 100V IR1 –– 15 500 µA Reverse Leakage Current, Tc= 75 oC VR = 100V IR2 –– 500 –– µA Reverse Leakage Current, Tc= 125 oC VR = 100V IR3 –– 8 15 mA Junction Capacitance VR = 5V, f= 1 MHz VR = 10V, f= 1 MHz Cj1 Cj2 380 425 500 –– pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0034A DOC