SH8J65 ROHM
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1/5 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A 4V Drive Pch+Pch MOSFET SH8J65 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit Package Code Taping Basic ordering unit (pieces) SH8J65 TB 2500 Type Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter VVDSS Symbol −30 VVGSS ±20 AID ±7.0 AIDP ±28 AIS −1.6 AISP −28 W / TOTALPD 2.0 W / ELEMENT1.4 °CTch 150 °CTstg −55 to +150 Limits Unit Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board Each lead has same dimensions SOP8 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (8) (7) (1) (2) (6) (5) (3) (4)
2/5 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet SH8J65 Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol IGSS Yfs Min. −− ± 10 μAV GS=±20V, VDS=0V VDD −15V Typ. Max. Unit Conditions Gate-source leakage V(BR) DSS −30 −− VI D= −1mA, VGS=0VDrain-source breakdown voltage IDSS −− − 1 μAV DS= −30V, VGS=0VZero gate voltage drain current VGS (th) −1.0 −− 2.5 V V DS= −10V, ID= −1mAGate threshold voltage − 21.5 29.0 I D= −7A, VGS= −10VStatic drain-source on-state resistance RDS (on) − 29.0 39.0 m Ω mΩ mΩ ID= −3.5A, VGS= −4.5V Forward transfer admittance Input capacitance 6.0 −− SV DS= −10V, ID= −7A Output capacitance Ciss − 1200 − pF V DS= −10V Reverse transfer capacitance Coss − 170 170 − pF V GS=0V Turn-on delay time Crss − − pF f =1MHz Rise time td (on) − − ns Turn-off delay time tr − − ns Fall time td (off) − − ns tf − − ns Qg − 3.5 − nC Qgs − 6.5 − nC VGS= −5V RL=2.1Ω / RG=10Ω Qgd −− nC ID= −7A ∗Pulsed Total gate charge Gate-source charge Gate-drain charge VDD −15V ID= −3.5A VGS= −10V RL=4.3Ω RG=10Ω Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> VSD −− − 1.2 V I S= −7A, VGS=0VForward voltage Parameter Symbol Min. Typ. Max. Unit Conditions ∗Pulsed
3/5 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet SH8J65 Electrical characteristic curves VGS= -2.5V Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V VGS= -3.0V 0.01 0.1 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 0.1 1 10 VGS= -4.0V VGS= -4.5V VGS= -10V Ta=25°C Pulsed 0.01 0.1 100 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 02468 1 0 VGS= -2.2V VGS= -2.5V Ta=25°C Pulsed VGS= -10V VGS= -4.0V VGS= -3.0V 100 0.1 1 10 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.1 1 10 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.1 1.0 10.0 VDS= -10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 100 0.1 1 10 VGS= -4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.8 Forward Transfer Admittance vs. Drain Current DRAIN CURRENT : -ID[A] DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -V DS[V] DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] DRAIN-CURRENT : -ID[A] REVERSE DRAIN CURRENT : -Is [A] SOURCE-DRAIN VOLTAGE : -VSD [V]
4/5 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet SH8J65 100 0 5 10 15 Ta=25°C Pulsed ID= -3.5A ID= -7.0A 01 0 2 0 3 0 4 0 Ta=25°C VDD= -15V ID= -7.0A RG=10Ω Pulsed 100 1000 10000 0.01 0.1 1 10 100 Ciss Coss Crss Ta=25°C f=1MHz V GS=0V 0.01 0.1 100 1000 0.1 1 10 100 PW = 10ms Ta = 25°C Single Pulse MOUNTED ON SERAMIC BOARD DC operation Operation in this area is limited by RDS(ON) (VGS=-10V) PW=100us PW=1ms 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W <Mounted on a SERAMIC board> 100 1000 10000 0.01 0.1 1 10 tr tf td(on) td(off) Ta=25°C VDD= -15V VGS=-10V RG=10Ω Pulsed Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Dynamic Input Characteristics Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.11 Switching Characteristics Fig.14 Maximum Safe Operating Aera Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] GATE-SOURCE VOLTAGE : -VGS[V] SWITCHING TIME : t [ns] DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS [V] TOTAL GATE CHARGE : Qg [nC] GATE-SOURCE VOLTAGE : -VDS[V] CAPACITANCE : C [pF] DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN CURRENT : -ID (A)
5/5 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet SH8J65 Measurement circuits Fig.16 Switching Time Test Circuit VGS RG VDS D.U.T. ID RL VDD Fig.17 Switching Time Waveforms 90% 90% 90% 10% 10 % 10% 50% 50% VGS VDS ton toff trtd(on) tftd(off) Pulse Width Fig.18 Gate Charge Test Circuit VGS IG(Const.) RG VDS D.U.T. ID RL VDD Fig.19 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd
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