RSR025N03

RSR025N03_1 ROHM

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Rev.C 1/3 4V Drive Nch MOS FET RSR025N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) . zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) Each lead has same dimensions(1) Gate (2) Source (3) Drain TSMT3 0~0.1 0.16 0.85 1.0MAX 0.7 0.3~0.6(2)(1) (3) 2.9 2.8 1.9 1.6 0.950.95 0.4 Abbreviated symbol : QY zPackaging specifications Package Code Taping Basic ordering unit (pieces) RSR025N03 TL 3000 Type zAbsolute maximum ratings (Ta=25°C) Parameter VVDSS Symbol VVGSS 20 AID AIDP AIS AISP WPD °CTch 150 °CTstg −55 to 150 Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Continuous Pulsed ContinuousSource current (Body diode) Pulsed ∗1 Pw≤100µs, Duty cycle≤2% ∗2 Mounted on a ceramic board. ±2.5 ±10 0.8 3.2 zEquivalent circuit ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. (1) Gate (2) Source (3) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) (2) (3) (3) (1) (2) zThermal resistance °C / WRth (ch-a) 125 Parameter Symbol Limits Unit Channel to ambient ∗2 Mounted on a ceramic board.

Rev.C 2/3 zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions Gate-source leakage V(BR) DSSDrain-source breakdown voltage IDSSZero gate voltage drain current VGS (th)Gate threshold voltage Static drain-source on-state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Ciss Reverse transfer capacitance Coss Turn-on delay time Crss Rise time td (on) Turn-off delay time tr Fall time td (off) Total gate charge tf Gate-source charge Qg Gate-drain charge Qgs Qgd −− 10 µAV GS=20V, VDS=0V VDD 15V 30 −− VI D=1mA, VGS=0V −− 1 µAV DS=30V, VGS=0V 1.0 − 2.5 V V DS=10V, ID=1mA − 50 70 I D=2.5A, VGS=10V − 74 105 m Ω ID=2.5A, VGS=4.5V − 83 118 I D=2.5A, VGS=4V 1.5 −− SI D=2.5A, VDS=10V − 165 − pF V DS=10V − 55 − pF V GS=0V − pF f =1MHz VGS=10V RL=12.0Ω RG=10Ω − ns − ns − ns 2.9 − ns 0.8 4.1 nC 0.9 − nC V GS=5V −− nC I D=2.5A ID=1.25A, VDD 15V ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Forward voltage VSD −− 1.2 V I S=3.2A, VGS=0V Parameter Symbol Min. Typ. Max. Unit Conditions ∗Pulsed

Rev.C 3/3 zElectrical characteristic curves 0.01 0.1 1 10 10 0 DRAIN-SOURCE VOLTAGE : VDS (V) 100CAPACITANCE : C (pF) 1000 Ta=25°C f=1MHz VGS=0V Fig.1 Typical Capacitance vs. Drain-Source Voltage Ciss Coss Crss 0.01 0.1 1 1 0 DRAIN CURRENT : ID (A) 100SWITCHING TIME : t (ns) 1000 Fig.2 Switching Characteristics Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tr tf td (off) td (on) 012345 6 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) Fig.3 Dynamic Input Characteristics Ta=25°C VDD=15V ID=2.5A RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) 0.001 0.01 0.1 DRAIN CURRENT : ID (A) Fig.4 Typical Transfer Characteristics Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VDS=10V Pulsed 02468 1 0 GATE-SOURCE VOLTAGE : VGS (V) 100 200 300 400 500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Ta=25°C Pulsed ID=2.5A ID=1.25A 0.0 0.5 1.0 1 .5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.01 0.1 SOURCE CURRENT : Is (A) Fig.6 Source Current vs. Source-Drain Voltage VGS=0V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 1 0 DRAIN CURRENT : ID (A) 100 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VGS=10V Pulsed DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 0.1 1 1 0 100 1000 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VGS=4.5V Pulsed DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 0.1 1 1 0 100 1000 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VGS=4V Pulsed

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.