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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET RCD075N20 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Code TL Basic ordering unit (pieces) 2500 RCD075N20 Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 200 V Gate-source voltage V GSS 30 V Continuous I D 7.5 A Pulsed I DP 30 A Continuous I S 7.5 A Pulsed ISP 30 A Avalanche current IAS 3.75 A Avalanche energy EAS 4.13 mJ Power dissipation PD 20 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C * Limited only by maximum channel temperature allowed. Parameter Type Source current (Body Diode) Drain current Parameter (1) Gate (2) Drain (3) Source 1 BODY DIODE CPT3 (SC-63) <S OT -428> 6.5 2.3(2) (3) 0.65 0.9 (1) 0.75 2.3 0.9 5.1 1.55.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8Min. 1.5 (1) (3)(2) 1/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RCD075N20 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 100 nA V GS=30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 200 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS -- 1 0 AV DS=200V, VGS=0V Gate threshold voltage V GS (th) 3.25 - 5.25 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 1.5 3.0 - S V DS=10V, ID=3.75A Input capacitance C iss - 755 - pF V DS=25V Output capacitance C oss - 55 - pF V GS=0V Reverse transfer capacitance C rss - 25 - pF f=1MHz Turn-on delay time t d(on) - 20 - ns V DD 100V, ID=3.75A Rise time t r - 22 - ns V GS=10V Turn-off delay time t d(off) - 24 - ns R L=26.67 Fall time t f - 12 - ns R G=10 Total gate charge Q g - 15 - nC V DD 100V, ID=7.5A Gate-source charge Q gs -6 - n C V GS=10V Gate-drain charge Q gd -6 - n C *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.5 V I s=7.5A, VGS=0V *Pulsed Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) ID=3.75A, VGS=10V- 250 325 2/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RCD075N20 Electrical characteristic curves (Ta=25C) 0.5 1.5 2.5 0 0.2 0.4 0.6 0.8 1 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=5.5V VGS=10.0V VGS=7.0V VGS=8.0V VGS=6.0V VGS=6.5V Ta=25°C pulsed 0 2 4 6 8 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=6.0V VGS=10.0V VGS=8.0V VGS=6.5V VGS=7.0V VGS=5.5V Ta=25°C pulsed 0.001 0.01 0.1 0 1 2 3 4 5 6 7 8 9 10 Drain Currnt : ID [A] Gate-Source Voltage : VGS [V] Fig.3 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C -50 -25 0 25 50 75 100 125 150 Gate Threshold Voltage : VGS(th) [V] Channel Temperature : Tch [℃] Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 100 1000 10000 0.1 1 10 Static Drain-Source On-State Resistance : RDS(on) [mΩ] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 Static Drain-Source On-State Resistance : RDS(on) [mΩ] Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature VGS=10V pulsed ID=3.75A ID=7.5A 3/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RCD075N20 0.01 0.1 0.01 0.1 1 10 Forward Transfer Admittance Yfs [S] Drain Current : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.0 0.5 1.0 1.5 Source Current : IS [A] Source-Drain Voltage : VSD [V] Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 200 400 600 800 1000 0 2 4 6 8 10 12 14 16 18 20 Static Drain-Source On-State Resistance RDS(on) [mΩ] Gate-Source Voltage : VGS [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=7.5A ID=3.75A Ta=25°C pulsed 100 1000 10000 0.01 0.1 1 10 Switching Time : t [ns] Drain Current : ID [A] Fig.10 Switching Characteristics tf VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) td(on) tr 0 5 10 15 20 25 30 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.11 Dynamic Input Characteristics Ta=25°C VDD=100V ID=7.5A Pulsed 100 1000 10000 0.01 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.12 Typical Capacitance vs. Drain-Source Voltage Crss Ta=25°C f=1MHz VGS=0V Ciss Coss 4/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RCD075N20 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 5/5 2011.10 - Rev.A
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