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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00017E DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information1/ └ Screening3/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package C = Ministud V = Isolated Ministud Voltage 6 = 600V 8 = 800V 10 = 1000V S6189F6 thru S6189F10

9 Amp

Features:  Fast Recovery: 250 nsec Maximum  PIV to 1000 Volts  Low Reverse Leakage Current  Hermetically Sealed Ministud Packages  Single Chip Construction  High Surge Rating  Low Thermal Resistance  TX, TXV, and Space Level Screening Available  Available in Ultrafast and Hyperfast Versions Maximum Ratings2/ Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage S6189F6C, V S6189F8C, V S6189F10C, V VRRM VRWM VR 600 800 1000 Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TC ≤ 100°C) IO 9 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TC ≤ 100°C) IFSM 125 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 °C Maximum Thermal Resistance (Junction to Case) “V” Isolated “C” Hot Case RθJC 7.5 4.5 °C/W Notes: 1/ For ordering information, pr ice, operating curves, and availability - contact factory. 2/ Unless otherwise specified, all electrical characteristics @ 25°C 3/ Screening based on MIL-PRF-19500. Screening flows available on request. Ministud (C) Isolated Ministud (V)

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00017E DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com S6189F6 thru S6189F10 Electrical Characteristics Symbol Max Units Instantaneous Forward Voltage Drop (IF = 9 Adc, TA = 25°C, 300 μs pulse) V F 1.2 VDC Instantaneous Forward Voltage Drop (IF = 9 Adc, TA = -55°C, 300 μs pulse) VF 1.3 VDC Reverse Leakage Current (Rated VR, TA = 25°C, 300 μs minimum pulse) IR 10 μA Reverse Leakage Current (Rated VR, TA = 100°C, 300 μs minimum pulse) IR 50 μA Junction Capacitance (VR = 10 VDC, TA = 25°C, f = 1 MHz) CJ 50 pF Reverse Recovery Time (IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25°C) tRR 250 nsec CASE OUTLINE: MINISTUD (C) CASE OUTLINE: ISOLATED MINISTUD (V)