PN918

MMST918 ROHM

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NPN High Frequency Transistor MMST918 / PN918 zFeatures 1) High current gain-bandwidth product fT=600MHz zPackage, marking, and packaging specifications Part No. MMST918 SMT3 RVX T146 3000 PN918 TO-92 T93 3000 Packaging type Marking Code Basic ordering unit (pieces) zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol VCBO VCEO VEBO IC Tj Tstg Limits 150 −55 to +150 Unit V V V A W WPC 0.2 0.310 MMST918 PN918 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature zExternal dimensions (Unit : mm) ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector MMST918 PN918 0 ∼ 0.1 2.8±0.2 1.6 0.3 ∼ 0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) 4.8±0.2(12.7Min.) 2.5Min. 4.8±0.2 3.7±0.2 5 0.45 2.3 0.5±0.1 −0.05+0.15 2.5+0.3 −0.1 (1) (2) (3) All terminals have same dimensions zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO 3.0 0.01 1.0 V V V µA µA IC=1.0µA IC=3.0mA IE=10µA VCB=15V VCB=15V , IE=0 , Ta=150°C VBE(sat) − − 1.0 V VCE(sat) −− 0.4 V IC/IB=10mA/1mA IC/IB=10mA/1mA −hFE 20 −− IC=3.0mA , VCE=1.0V fT Cob 600 1.7 MHz pF IC=4.0mA , VCE=10V, f=100MHz VCB=10V , IE=0 , f=140kHz −− 3.0 pF VCB=0 , IE=0 , f=140kHz Cib −− 2.0 pF VEB=0.5V , IC=0 , f=140kHz NF −− 6.0 dB IC=1.0mA , VCE=6.0V ,RG=400Ω , f=60MHz VCB=12V , IC=6.0mA , f=200MHzGpe 15 −− dB Pout 30 −− mW VCB=15V , IC=8.0mA , f=500MHz VCB=15V , IC=8.0mA , f=500MHzη 25 −− % Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Noise figure Power gain Output power Collector efficiency

zElectrical characteristic curves 200 10 IB=0µA 20µA 40µA 60µA 80µA 100µA 120µA 140µA 160µA 180µA Ta=25°C COLLECTOR CURRENT : Ic (mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Typical output characteristics 0.1 0.2 0.5 12 5 10 20 50 100 100 200 500 1000 50DC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic (mA) Ta=25°C VCE=10V Fig.2 DC current gain vs. collector current 0.1 0.2 0.5 1 2 5 10 20 50 100 0.2 0.3 0.1 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : Ic (mA) Ta=25°C IC / IB=10 Fig.3 Collector-emitter saturation voltage vs. collector current 0.1 0.2 0.5 1 2 5 10 20 50 100 0.8 0.6 1.2 1.0 1.8 1.6 1.4 0.4 0.2 BASE EMITTER VOLTAGE : VBE(ON) (V) COLLECTOR CURRENT : Ic (mA) Ta=25°C VCE=10V Fig.5 Base-emitter 'ON' voltage vs. collector current 0.1 0.2 0.5 12 5 10 20 50 100 0.1 0.2 0.5CAPACITANCE (pF) REVERSE BIAS VOLTAGE : V (V) Ta=25°C f=1MHz Cob Fig.6 Capacitance vs. reverse bias voltage Cib 0.1 0.2 0.5 1 2 5 10 20 50 100 0.8 1.0 1.2 1.4 1.8 1.6 0.2 0.4 0.6 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : Ic (mA) Ta=25°C IC / IB=10 Fig.4 Base-emitter saturation voltage vs. collector current 0.1 0.2 0.5 1 2 5 10 20 50 100 5000 2000 1000 500 200 100 CURRENT GAIN BANDWIDTH PRODUCT (MHz) COLLECTOR CURRENT : Ic (mA) Ta=25°C VCE=5V Fig.7 Current gain bandwidth product vs. collector current

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.