Overview
IRF830 is listed in the Interface category. Available datasheets include documents from International Rectifier, Comset Semiconductor, Dc Components and 8 more.
Summary
High current, high speed switching
Description
The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Source title
IRF830 Datasheet(PDF) - Silikron Semiconductor Co.,LTD.