2N7002K

2N7002K_08 VISHAY

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 6

Technical content

Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com N-Channel 60-V (D-S) MOSFET

FEATURES

• Low On-Resistance: 2 Ω  Low Threshold: 2 V (typ.)  Low Input Capacitance: 25 pF  Fast Switching Speed: 25 ns  Low Input and Output Leakage  TrenchFET ® Power MOSFET  2000 V ESD Protection BENEFITS  Low Offset Voltage  Low-Voltage Operation  Easily Driven Without Buffer  High-Speed Circuits  Low Error Voltage

APPLICATIONS

 Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  Battery Oper ated Systems  Solid-State Relays PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (mA) 60 2 at VGS = 10 V 300 T O -236 SOT -23 Top View 2N7002K (7K)* * Marking Code G S D Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C ID 300 mATA = 100 °C 190 Pulsed Drain Currenta IDM 800 Power Dissipationb TA = 25 °C PD 0.35 WTA = 100 °C 0.14 Maximum Junction-to-Ambientb RthJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Available Pb-free RoHS* COMPLIANT

www.vishay.com Document Number: 71333 S-81469-Rev. C, 23-Jun-08 Vishay Siliconix 2N7002K Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12 . 5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µAVDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V 10 VDS = 50 V, VGS = 0 V, TJ = 85 °C 100 VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta ID(on) VGS = 10 V, VDS = 7.5 V 800 mAVGS = 4.5 V, VDS = 10 V 500 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 500 mA 2 ΩVGS = 4.5 V, ID = 200 mA 4 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS Diode Forward Voltage VSD IS = 200 mA, VGS = 0 V 1.3 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID ≅ 250 mA 0.4 0.6 nC Input Capacitance Ciss VDS = 25 V, VGS = 0 V f = 1 MHz pFOutput Capacitance Coss 6 Reverse Transfer Capacitance Crss 2.5 Switchinga, b, c Tur n-On Time td(on) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω ns Turn-Off Time td(off) 35

Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com Vishay Siliconix 2N7002K TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012 345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS = 10 V 3 V 5 V 4 V

6 V 7 V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 ID - Drain Current (mA) V GS = 4.5 V V GS = 10 V - On-Resistance (Ω)RDS(on) VDS = 10 V ID = 250 mA - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 300 600 900 1200 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (mA)ID T J = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss VGS = 0 V 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 TJ - Junction Temperature (°C) V GS = 10 V at 500 mA V GS = 4.5 V at 200 mA (Normalized) - On-ResistanceRDS(on)

www.vishay.com Document Number: 71333 S-81469-Rev. C, 23-Jun-08 Vishay Siliconix 2N7002K TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 T J = 25 °C T J = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S T J = - 55 °C V GS = 0 V Variance (V)VGS(th) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 02468 1 0 V GS - Gate-to-Source Voltage (V) I D = 500 mA I D = 200 mA - On-Resistance (Ω)RDS(on) 0.01 2.5 100 600 0.1 Power W Time (s) 1.5 0.5 T A = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 1 0 600 10 -1 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th JA = 350 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM

Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Pr oducts may be manufactured at one of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71333. Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 1 1010 -1 10 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.