F00317 SSDI
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Technical content
TE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714} 522-7424 10 AMP Designer’s Data Sheet 400 VOLTS 0.550, FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate « Low RDS(on) and high transconductance . TO-66 - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance Ne @ + Increased reverse energy capability NS PS . Low input and transfer capacitance for easy paralleling SS + Hermetically sealed package i - TX, TXV and Space Level screening available » Replaces: IRF340 Types _ MAXIMUM RATINGS CHARACTERISTIC Drain o Source Votage [vos | ao | vote Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C. 63 Total Device Dissipation @ TC=55'C. 48 PACKAGE OUTLINE: TO-66 PIN OUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE 2.980" Hox. a eors: s2 Poe ma HO (tl) & S Ng ms 0.145" R. Mas 0.260 Mn | 2034" pia c2 Ptce.d o.1008,07" (eres) ee Pics.) 1904. 9075 0.5008. 010" 041478, 005" Dia NOTE: All specifications are subject to change without DATA SHEET #: F00317 A | SSDI prior to release.
PRELIMINARY SKS SD | SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25'C (Unless Otherwise Specified) RATING symeou| MIN | typ_| max | UNIT Drain to Source Breakdown Voltage (VGS=0 V, ID=250pA) BVpss 400 Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uA) Vasith) v Forward Transconductance (VDS > 50V, IDS=60% rated ID) 8.7 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125"C) 1000 | - Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qe 43 Gate to Source Charge 80% rated V1 DS Qge 6 Gate to Drain Charge = Qga 22 Turn on Delay Time Mepante4 td(on) 14 30 Rise Time ID=10A tr 2 4 Turn Off Delay Time RG=9.10 ta(ot 50 va Fall Time RD=202 tt 24 36 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) . 7 TJ=25°C Diode Reverse Recovery Time 170 370 790 nsec Reverse Recovery Charge ae ra 16 38 8.2 uc tnput Capacitance VGS=0 Volts Ciss 1300 1600 Output Capacitance VDS=25 Volts Coss 350 450 Reverse Transfer Capacitance f= 1 MHz Crss 130 190 SHE OTHAINE ABA SOA) es ee nai eee ie |
3 TNT
§ oN i ae oe re | en | | oor EESTI HII TMI TTT 0.1 4 10 100 1000 DRAIN TO SOURCE VOLTAGE (OS)