F00313_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SMD) PRELIMINARY on 14849 Firestone Boulevard. La Mirada,CA 90638 . Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 25 AMP -_ Designer’s Data Sheet 500 VOLTS FEATURES: N-CHANNEL POWER MOSFET + Low RDS(on) and high transconductance - Excellent high temperature stability 10-257 - Very fast switching speed - Fast recovery and superior dv/dt performance - Low input and transfer capacitance for easy paralleling + Hermetically sealed package - Low inductance leads - TX, TXV and Space Level screening available - Replaces: IRF420 Types MAXIMUM RATINGS CHARACTERISTIC [symeo. | vawe | unr | Fowiniosouce vote |v] Fenetosoucevetie Sift [connowoancuen || [ MemaiResncewnsonwcae | eas LOW Lee PACKAGE OUTLINE: TO-257 150 420 200 9° 410 . 045, PIN OUT: 140 71 | aE .045 PIN 1: DRAIN T aI PIN 2: SOURCE 665 Tv PIN 3: GATE 937 645 430 527 “410 F i * .750 1 3 — 2 x100BSC 4 +.120BSC 035 5x 9995 t SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeou.| win | tye | max | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) Drain to Source on State Resistance (VGS=10 V) (D=1.5A Gate Threshold Voltage (VDS=VGS, ID=2501A) Vasith) 4.0 Forward Transconductance (VDS 215V, IDS=1A) S(o) Zero Gate Voltage Drain Current (VDS=80% rated VDS, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125°C) HA Gate to Source Leakage Forward Gate to Source Leakage Reverse [ wmmevos | ioe | = | = | ae | | Total Gate Charge VGS=10 Volts Qg 7.3 16.7 Gate to Source Charge 50% rated VDS Qgs 0.1 3.0 Gate to Drain Charge ID=1.5A Qga 3.7 12.0 Turn on Delay Time VDD=50% ta(on) 40 Rise Time tated VOS on 30 Turn Off Delay Time RG=7.5Q ta(otf) 60 Fall Time RD=1670 tt 30 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25"C) Vsp v Reverso Recovery charge | aeene,.| de | = | = | | te Reverse Recovery Charge dildt=100 Musec 5.9 ww Input Capacitance Ciss 360 Output Capacitance Vos Kes, Coss 92 Reverse Transfer Capacitance f= 1 MHz Crss 37 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.