F00311_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
SOLID STATE DEVICES, INC. SFF75N06M SFF75N06Z FEATURES: DATA SHEET #: F00311B MAXIMUM RATINGS
- Advanced high-cell density withstands high energy
- Very low conduction and switching losses
- Fast recovery drain-to-source diode with soft recovery
- Rugged construction with poly silicon gate
- Ultra low RDS (on) and high transconductance
- Excellent high temperature stability
- Very fast switching speed
- Fast recovery and superior dv/dt performance
- Increased reverse energy capability
- Low input and transfer capacitance for easy paralleling
- Hermetically sealed package
- TX, TXV and Space Level screening available
75 AMP
60 VOLTS
15m ΩΩΩΩΩ N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. V DG 60 VoltsDrain to Gate Voltage (RGS = 1.0 mΩ)Ω)Ω)Ω)Ω) ID 56 1/Continuous Drain Current Drain to Source Voltage V DS 60 Amps Volts Thermal Resistance, Junction to Case R ΘΘΘΘΘ JC T op & T stg -55 to +150Operating and Storage Temperature oC oC/W1 CHARACTERISTIC SYMBOL VALUE UNIT WattsTotal Device Dissipation P D 125 @ TC = 25oC @ TC = 55oC TO-254Z (Z)TO-254 (M)
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773 CASE OUTLINE: TO-254Z (Sufix Z)CASE OUTLINE: TO-254 (Sufix M) Available with Glass or Ceramic Seals. Contact Facory for details. Gate to Source Voltage V GS + 20 Volts Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate
SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ T J =25oC (Unless Otherwise Specified) VDrain to Source Breakdown Voltage (VGS =0 V , ID = 250µA) -BV DSS - RATING SYMBOL MIN TYP MAX UNIT m ΩΩΩΩΩDrain to Source on State Resistance (VGS = 10 V ,Tc = 150oC) R DS(on) VGate Threshold Voltage (VDS = VGS, ID = 250µA) -V GS(th) 4.02 SmhoForward Transconductance (VDS > ID(on) X RDS (on) Max, IDS=60% rated ID) 35gfs -15 µµµµµ A Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS , VGS = 0V , TA = 125oC) IDSS - Gate to Source Leakage Forward Gate to Source Leakage Reverse -IGSS +100 -100 -At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10 V 50% rated VDS Rated ID Qg Qgs Qgd 120 nsec Turn on Delay Time Rise Time Turn off DelayTime Fall Time VDD =50% rated VDS 50% rated ID RG=6.2 Ω td (on) tr td (off) tf 100 V1.47V SD 1.4- Diode Reverse Recovery Time Reverse Recovery Charge 70 trr Q RR 150- TJ =25oC IF = 10 di/dt = 100A/µsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V olts VDS =25 V olts f =1 MHz Ciss Coss Crss 2600 700 260 2900 1100 275 pF nsec For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. AOn State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) -ID(on) -75 Diode Forvard Voltage (IS = rated ID , VGS = 0V , TJ = 25oC) nC nA 250 1000 SFF75N06M SFF75N06Z Phone: (562) 404-7855 * Fax: (562) 404-1773 NOTES: 1/ Maximum current limited by package, die rated at 75A. ID=37.5A ID=75A ID=37.5A