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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00265E DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight UB = Up Bend DB = Down Bend └ Package: TO-257 TO-257 Pin Out: Pin1: Drain Pin2: Source Pin3: Gate SFL044J 30 AMP / 60 Volts / 0.030 Ω N-Channel, Logic Level POWER MOSFET Features:  Logic Level Gate Drive  Rugged Construction with Polysilicon Gate  Low R DS(ON) and High Transconductance  Excellent High Temperature Stability  Very Fast Switching Speed  Fast Recovery and Superior dV/dt Performance  Increased Reverse Energy Capability  Low Input and Transfer Capacitance for Easy Paralleling  Hermetically Sealed Surface Mount Power Package  Ceramic Seals Available for Improved Hermeticity  TX, TXV, Space Level Screening Available  Replacement for IRLIZ44G Types Maximum Ratings Symbol Value Units Drain to Source Voltage VDS 60 Volts Gate to Source Voltage VGS ±10 Volts Continuous Drain Current @ VGS = 5V ID 30 Amps Operating & Storage Temperature Top & Tstg -55 to +175 ºC Thermal Resistance, Junction to Case RJC 2 ºC/W Power Dissipation TC = 25ºC TC = 55ºC PD 63 48 W .537 .527 .660 .645 .430 .410 .210 .190.045 .035 Ø.150 .140 .420 .410 .105 .095 .125 .110 1.100 .500 PIN 1 PIN 2 PIN 3 SUFFIX: J 3x Ø.035 .025 SUFFIX JDB SUFFIX JUB Notes: 1/ For ordering information, Price, and Availability, Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Per Leg. 2x .180 .150 .200 MIN SUFFIX: JD .180 .150 .200 MIN SUFFIX: JU

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00265E DOC Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFL044J Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250A BVDSS 60 –– –– Volts Drain to Source On State Resistance (VGS=5 V, ID=18A RDS(on)1 –– 0.032 0.036  Drain to Source On Resistance (VGS=4 V, ID= 15A RDS(on)2 0.034 0.040  Gate Threshold Voltage (VDS=VGS, ID= 250A VGS(th) 1.0 1.5 2.0 V Forward Transconductance (VDS>10V, IDS=18A gfs 22 35 –– S(mho) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150ºC) IDSS –– 250 A Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS= 5 Volts 80% rated VDS ID= 15 A Qg Qgs Qgd nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS ID= 15 A RG= 4.6  RD= 0.56  td(on) tr td(off) tf nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1.2 2.5 V Diode Reverse Recovery Time TJ=25ºC, IF= 10 A di/dt=100A/sec trr –– 100 180 nsec Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 3300 1100 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department.