F00251_15 SSDI
Document overview
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Technical content
aa ATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 4.5 AMP Designer’s Data Sheet soovorts FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance CERPACK . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability : Low input and transfer capacitance for easy paralleling . Hermetically sealed surface mount package . TX, TXV and Space Level screening available . Replaces: IRF430 Types MAXIMUM RATINGS CHARACTERISTIC symeol | value | UNIT Operating and Storage Temperature “c Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: CERPACK PIN OUT: PIN 1: SOURCE PIN 2: GATE CASE: DRAIN k— 0376 — ; 0.060" coseeoowr 007+ $0008 Wl ae ose ose o30r 0320 ois REF. NOTE: ificati bj h ith SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sympou| min | typ_| max _ | uni Drain to Source Breakdown Voltage (VGS=0 V, ID=250/A) BVpss Drain to Source on State Resistance (VGS=10 V, ID= 2.5 A) On State Drain Current (VDS = 8V, VGS=10 V) Gate Threshold Voltage (VDS=VGS, ID=250A) Vas(th) Forward Transconductance (VDS > 10 V, IDS= 2.5 A) 27 S(v) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 yA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 21 32 Gate to Source Charge 80 “erated V DS Qgs 3.2 48 Gate to Drain Charge ater Qga "1 17 Turn on Delay Time Mote rae td(on) 11 17 Rise Time ID=4.5A tr 15 23 Turn Off Delay Time RG= 12.0 ta(ott) 35 53 Fall Time RD= 56 Q tf 15 23 Diode Forward Voltage Vsp 1.6 Vv (IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C 180 370 760 Diode Reverse Recovery Time = ter nsec Reverse Recovery Charge uate hisec Qrr 0.96 2.0 43 uc Input Capacitance VGS=0 Volts Ciss 610 Output Capacitance VDS=25 Volts Coss 91 Reverse Transfer Capacitance f= 1 MHz Crss 18