F00243_15 SSDI
Document overview
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Technical content
SOLID STATE DEVICES, INC ‘ ae |
49 Firestone Boulevard: La Mirada,CA 90638 Cal ral]
16.5 AMP
F ; ’ 600 VOLT Designer’s Data Sheet 0.402 N-CHANNEL FEATURES: POWER MOSFET ™@ Rugged construction with poly silicon gate @ Ultra Low RDS(on) and high transconductance TO-258 CERAMIC ™® Excellent high temperature stability ™@ Very fast switching speed § Fast recovery and superior dv/dt performance @ Increased reverse energy capability @ Low input and transfer capacitance for easy paralleling ZS @ Hermetically sealed package ZB @ TX, TXV and Space Level screening available ™ Replaces: APT6040N Types AR MAXIMUM RATINGS CHARACTERISTIC SYMBOL valuE | UN | Drain to Source Votage | vos | cave 6, Continuous Drain Current ee LI Operating and Storage Temperature |_Tep& Tog | G8t0+150_| Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-258 CERAMIC PIN |: DRAIN 1: 4 PIN 2: SOURCE : mis PIN 3: SOURCE-SENSE 1 PIN 4: GATE jeer Lee — = == E mye i | = Goto: 205° | 3 pens sa sa oss aoe baat 18 | i aa ee ee oe Tae —— T Matiication, SCD's for those devices should be reviewed by | DATA SHEET #: F00243 A MED ; SSDI prior to release. {
}_Srrteneonc | SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250yA) BVoss Drain to Source on State Resistance (VGS=10 V, ID= 0.5 A) Rps(on) On State Drain Current (VGS=10V, VDS=10V) Gate Threshold Voltage (VDS=VGS, ID= 1mA) Vasith) Forward Transconductance (VDS >ID(on) X RDS(on) Max, ID= 30 A) Zero Gate Voltage Drain Current Vos. 600 V, VGS=0 V, TAses 0). 250 pA ‘VDS= 600 V, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward VDS=0V +100 Gate to Source Leakage Reverse VGS=+30V -100 Total Gate Charge VGS=10 Volts Qg 87 130 Gate to Source Gharge 50% rated VDS Qgs 1 16 Gate to Drain Charge Rated ID Qoa 46 69 Turn on Delay Time VBD- 30V td(on) 14 28 Rise Time RG= 1.82 tr 23 46 Turn Off Delay Time VGEN= 10 V ta(otf) 63 95 Fall Time tt 23 46 Diode Forward Voltage (\\S=rated ID, VGS=0 V, TJ=25°C) 1.3 Diode Reverse Recovery Time ess tre 334 668 | nsec Reverse Recovery Charge di/dt=100 A/usec Qrr 5 10 uc Input Capacitance VGS=0 Volts Ciss 2400 2950 Output Capacitance VDS=25 Volts Coss 436 610 Reverse Transfer Capacitance f= 1 MHz Crss 154 230 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.