F00225_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
SOLID STATE DEVICES, INC. SFF120-28Q FEATURES: DATA SHEET #: F00225B MAXIMUM RATINGS
- Rugged construction with poly silicon gate
- Low RDS (on) and high transconductance
- Excellent high temperature stability
- Very fast switching speed
- Fast recovery and superior dv/dt performance
- Increased reverse energy capability
- Low input and transfer capacitance for easy paralleling
- Hermetically sealed surface mount package
- TX, TXV and Space Level screening available
- Replaces 4x IRF120 Types in One Package
28 PIN CLCC
9.2 AMPS
100 VOLTS
0.35S QUAD N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: MOSFET 1 DRAIN: 5, 6, 7 GATE: 1 SOURCE: 2, 3, 4 MOSFET 2 DRAIN: 9, 10, 11 GATE: 8 SOURCE: 12, 13, 14 MOSFET 3 DRAIN: 19, 20, 21 GATE: 15 SOURCE: 16, 17, 18 MOSFET 4 DRAIN: 23, 24, 25 GATE: 22 SOURCE: 26, 27, 28 (3 PLACES) V GS ±20 VoltsGate to Source Voltage ID 9.2Continuous Drain Current Drain to Source Voltage V DS 100 Amps Volts Thermal Resistance, Junction to Case (All Four) R 2JC T op & T stg -55 to +150Operating and Storage Temperature oC oC/W10 CHARACTERISTIC SYMBOL VALUE UNIT WattsTotal Device Dissipation P D 12.5 9.5 @ TC = 25oC @ TC = 70oC NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on)
SOLID STATE DEVICES, INC. SFF120-28Q PRELIMINARY Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ T J =25oC (Unless Otherwise Specified) VDrain to Source Breakdown Voltage (VGS =0 V , ID =250:A) -BV DSS - RATING SYMBOL MIN TYP MAX UNIT 100 SDrain to Source ON State Resistance (VGS = 10 V , 60% of Rated ID) -R DS(on) 0.35- VGate Threshold Voltage (VDS =VGS, ID =250:A) -V GS(th) 4.02.0 S(É)Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) 4.1gfs -2.7 Zero Gate Voltage Drain Current (VDS = max rated V oltage, VGS = 0V) (VDS = 80% rated VDS , VGS = 0V , TA = 125oC) IDSS - Gate to Source Leakage Forward Gate to Source Leakage Reverse -IGSS +100 -100 -At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10 V 80% rated VDS 60% rated ID Qg Qgs Qgd 10.7 2.9 5.1 4.4 7.7 nsec Turn on Delay Time Rise Time Turn off DELAY Time Fall Time VDD =50% rated VDS 50% rated ID RG = 18 S t d (on) tr td (off) tf V-V SD 2.5- Diode Reverse Recovery Time Reverse Recovery Charge 140 0.65 trr Q RR 260 1.3 0.25 TJ =25oC IF = rated ID di/dt = 100A/:sec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V olts VDS =25 V olts f =1 MHz Ciss Coss Crss 350 130 pF nsec For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. AON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) -ID(on) -9.2 Diode Forvard Voltage (IS = rated ID , VGS = 0V , TJ = 25oC) nC nA 250 NOTES: