F00217_15 SSDI

Document overview

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Technical content

x «, SFF11N80N SOLID STATE DEVICES, INC ~~ hy . //SFF11N80P

14849 Firestone Boulevard: La Mirada,CA 90638 =

Phono: (714) 670-SSDI (7734) - Fax: (714) 522-7424

11 AMPS

Designer's Data Sheet 800 VOLTS 0.95Q FEATURES: N-CHANNEL a a POWER MOSFET . Rugged construction with polysilicon gate = Low DS(on) and high transconductance TO-258 TO-259 . Excellent high temperature stability = Very fast switching speed . Fast recovery and superior dv/dt performance . {ncreased reverse energy capabil ty ; ES . ow input and transfer capacitance for easy paralleling G s Geramic Seals for improved hermeticity ZED KK LJ lermetically sealet wer package 6 < <P . TX, TXV and Space Revel SSeering available ° 2 SF . Replaces: IXTH11N80 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL valuE | unt | oe Operating and Storage Temperature -55 to +175 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TO ase) PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE #18 270 188 T te] no 130 te BSC mi ST oes B35 TI 120 ® cy _ 3 Paty 85, esc $3 | L 245 (ST) Ul lg mi 750 . 730 ‘00 ; | 1 ai

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NOTE: All fl ‘SSDI prior to release.

SFF11N80P SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T=25 C (Unless Otherwise Specified) RATING sypou| min [tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=2501A) BVpss 800 Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250p/A) Vasith) Forward Transconductance (VDS >ID(on) X_RDS(on) Max, {DS=50% rated ID) Zero Gate Voltage Drain Current (yBsemay rated voltage, VGS=0 py) 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 155 Gate to Source Sharge 80% rated VDS Qgs 45 Gate to Drain Charge 0% Rat Qo 80 Turn on Delay Time VOD«5O% td(on) 50 Rise Time 50% rated ID tr 50 Turn Off Delay Time RG=2.02 ta(ot) 100 Fall Time tt 50 Diode Forward Voltage Vsp v (IS=rated ID, VGS=0 V, Tu=25°C) TJ=25°C Diode Reverse Recovery Time ay nsec Reverse Recovery Charge ee. | de | = | = | @ [ae Input Capacitance VGS-0 Volts Ciss 4200 Output Capacitance VDS=25 Volts Coss 360 Reverse Transfer Capacitance f= 1 MHz Crss 100 For thermal derating curves and other characteristic curves please contact SSD! Marketing Department.