F00213 SSDI

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Technical content

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight Leads D B = D o w n B e n d U B = U p B e n d └ Package 3/ M = TO-254 Z = TO-254Z SFF11N80 Series

11 AMP / 800 Volts

0.95 Ω N-Channel MOSFET Features:

  • Rugged Construction with Polysilicon Gate Cell
  • Low RDS(ON) and High Transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dV/dt performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Hermetically Sealed, Isolated Package
  • Ceramic Seal Package Available. Contact Factory
  • TX, TXV, S-Level screening available
  • Replacement for IXTH11N80 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 800 Volts Gate – Source Voltage VGS ±20 Volts Continues Collector Current ID 11 Amps Power Dissipation TC = 25ºC TC = 55ºC PD 150 114 W Operating & Storage Temperature Top & Tstg -55 to +175 ºC Maximum Thermal Resistance Junction to Case RθJC 0.83 ºC/W TO-254 (M) TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00213C DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF11N80 Series Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) BVDSS 800 –– –– Volts Drain to Source On State Resistance (VGS = 10V, ID = 5.5A) RDS(on) –– –– 0.95 Ω On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) ID(on) 11 –– –– A Gate Threshold Voltage (VDS = VGS, ID = 250µA) V GS(th) 2.0 –– 4.5 V Gate to Source Leakage (VGS = ±20V) IGSS –– –– ±100 nA Zero Gate Voltage Drain Current (VGS = 0V) VDS = 800V, TA = 25ºC VDS = 640V, TA = 125ºC IDSS –– 250 1.0 µA mA Forward Transconductance * (VDS > ID(on) x RDS(on) Max, ID = 5.5A) g fs 8.0 14 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge V GS = 10V VDS = 640V ID = 5.5A Qg Qgs Qgd 128 145 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time V DS = 400V ID = 5.5A RG = 2.0Ω td(on) tr td(off) tf 100 nsec Diode Forward Voltage * (IF = 11A, VGS = 0V) V SD –– –– 1.5 V Diode Reverse Recovery Time (IF = 11A, di/dt = 100A/µsec) trr –– –– 550 nsec Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V VDS = 25V f = 1MHz Ciss Coss Crss 4200 360 100 pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% / For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFF11N80M; SFF11N80MDB; SFF11N80MUB; SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3

SOLID STATE DEVICES INC.

14830 Valley View, La Mirada, Ca 90631

Data Sheet Number F00213 Rev C Check Box to Include on Web: □ Part Number(s): SFF11N80M SFF11N80Z Approval Sign Date Engineering Manager: Executive / CEO Operation Manager: Marketing Manager: Quality Manager: Revisions ECO No REV DATE DESCRIPTION APPROVAL E-030492 C 08/12/03 Changed Trr 250ns to 550ns FORM# Q312 Rev. B