F00205 SSDI
Document overview
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Technical content
| —}) SFFZON6GON yp SOLID STATE DEVICES, INC Jf, SFF20N60P
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424
20 AMPS
Designer's Data Sheet 600 VOLTS 0.40 Q FEATURES: N-CHANNEL oo 7 POWER MOSFET . Rugged construction with polysilicon gate . Low DS(on) and high transconductance TO-258 TO-259 . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling & : Ceramic Seals for improved hermeticity eS . Hermetically sealed power package 6 ZR HY + TX, TXV and Space Level screening available 6 2A 4 : Replaces: IXTH20N60 Types ° MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT [condones Operating and Storage Temperature ~55 to +175 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TO-259 (P) PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE #18 270 RES ro 88 -240f° ms 210, B80 270 rE#] no 130 685 1 [e-t25 Bsc mi sf rt 707 id T WN 12} 850 ‘697 $50 Pars 285 BSC 239 | a 285 es L [zl “T 750 . 750 2 1 3 1 mi 3 0884 | | o0nsc 408804 x 0988 4t | Lj soogsc (140 BSC 4 NOTE: All iticati | hi SSDI prior to release.
SFF20NGON —— SSDI SFF20N60P SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) [RATING | spon] on | rye | max | unr | Drain te Source Breakdown Voltage (VGS=0 V, ID=250A) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,A) Forward Transconductance (os >ID(on) X_RDS(on) Max, IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 py) 200 (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward Atrated VGS. +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 150 170 Gate to Source Sharge 80% fated vos Qgs 29 40 Gate to Drain Charge 50 %Rated | Qoq _ 60 85 Turn on Delay Time von ta(on) 30 40 Rise Time 50% rated ID tr 30 60 Turn Off Delay Time RG=6.2Q ta(off) 110 150 Fall Time tt 30 60 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) 15 Diode Reverse Recovery Time a 800 nsec Reverse Recovery Charge di/dt=100 Ausec - uc Input Capacitance VGS-=0 Volts Ciss 4500 Output Capacitance VDS=25 Volts Coss 420 Reverse Transfer Capacitance f= 1 MHz Crss 140 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.