F00187_15 SSDI
Document overview
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Technical content
SSDI PRELIMINARY . SOLID STATE DEVICES, INC SFFION1 3 4
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424
10 AMP
Designer’s Data Sheet 1000 VOLTS 1.20 FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance TO-3 . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance > . Increased reverse energy capability IS = _ Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity = Hermetically sealed power package i) u . TX, TXV and Space Level screening available Replaces: IXTH10N100 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage 1000 Operating and Storage Temperature -55 to +175 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE:TO-3 PIN OUT: Hor . M77 PIN 1: GATE 20875" nox, PIN 2: SOURCE “| CASE: DRAIN 9.450" __£ 0135" nox oan 0 0188" max = ase’ (O @) NOTE: All ificati b hi ith SSDI prior to release.
SOLID STATE DEVICES, INC . 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25’C (Unless Otherwise Specified) [RATING =| sven | on | typ | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=3mA) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS = 15V, VGS=10 V ID(on) Gate Threshold Voltage (VDS2VGS, ID=4mA) Vasi(th) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(w) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 WA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 110 155 Gate to Source Charge 50% rated VDS Qgs 20 45 Gate to Drain Charge al Qgd 40 80 Turn on Delay Time veo" ore td(on) 30 50 Rise Time 50% rated ID tr 20 50 Turn Off Delay Time RG=6.2Q td(off) 110 130 Fall Time VGS=10V tt 40 50 Diode Forward Voltage Vsb (\\S=rated ID, VGS=0 V, TJ=25°C) ‘i * TJ=25°C Diode Reverse Recovery Time IF=rated ID tr nsec Reverse Recovery Charge di/dt=100 A/usec QrR ue Input Capacitance VGS=0 Volts Ciss 4000 Output Capacitance VDS=25 Volts Coss 310 Reverse Transfer Capacitance f= 1 MHz Crss 70 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.