F00185_15 SSDI
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Technical content
SOLID STATE DEVICES, INC SFF10N100B
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 oe _
10 AMP
Designer’s Data Sheet 1000 VOLTS 1.20 FEATURES: ° N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate a . Low RDS(on) and high transconductance MILPACK 2 . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance : Increased reverse energy capability . Low input and transfer capacitance for easy paralleling . + Hermetically sealed surface mount power package . TX, TXV and Space Level screening available . Replaces: IXTH10N100 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL value | UNIT | Operating and Storage Temperature -55 to +150 °c Total Device Dissipation @ TC=25°C 250 Total Device Dissipation @ TC=55°C. 190 PACKAGE OUTLINE:MILPACK 2 t—_ o7eseoi0 — PIN OUT: PIN 1: DRAIN PIN 2: SOURCE oatoto10" PIN 3: GATE assseaie @ mics asacs.o10" o06et.00s* asscesior ear) a . 105.003" coe Tossa NOTE: Al ificati b i SSDI prior to release.
PRELIMINARY SSD] SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS: @ Ty=25’C (Unless Otherwise Specified) RATING SyMBoL| MIN | TYP | Max | UNM | Drain to Source Breakdown Voltage (VGS=0 V, ID=3mA) BVpss Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS = 15V, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Vas(th) Forward Transconductance (VDS >ID(on) X_RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| Atrated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 110 155 Gate to Source Charge 50% rated VOS Qgs 20 45 Gate to Drain Charge at Qgd 40 80 Turn on Delay Time vos ta(on) 30 50 Rise Time 50% rated ID tr 20 50 Turn Off Delay Time RG=6.20 td(off) 110 130 Fall Time VGS=10V tt 40 50 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time aera 1200 nsec Reverse Recovery Charge di/dt=100 A/usec 7 yc Input Capacitance VGS=0 Volts Ciss 4000 Output Capacitance VDS=25 Volts Coss 310 Reverse Transfer Capacitance f= 1 MHz Crss 70 SAFE OPERATING AREA, (S.0.A.) 0 == mest east ete a 0 | a | | a A 1) af gs Te LOT MTN TT 2) ER FI a a 0 | | 8 a A | Cn Tih ee -LMT T TT O04 1 10 100 1000 ean To sour vou Tace (v8)