F00181 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC SFF10N100N SFF10N100P
14849 Firestone Boulevard - La Mirada,CA 90638
10 AMP
Designer’s Data Sheet: 1000 VOLTS - 1.29 FEATURES: N-CHANNEL a ” POWER MOSFET . . Rugged construction with polysilicon gate : Low RDS(on) and high transconductance TO-258 TO-259 : Excellent high temperature stability : Very fast switching speed - Fast recovery and superior dv/dt performance : Increased reverse energy capability g . Low input and transfer capacitance for easy paralleling > . Ceramic Seals for Improved hermeticity ZBICS . lermetically sealed surface mount power package 6 . : TX, TXV and Space Level screening available Za ANI : Replaces: IXTH10N100 Types MAXIMUM RATINGS" CHARACTERISTIC SYMBOL vaLuE | unT | Operating and Storage Temperature Top & Tstg -55 to +150 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TO.289 Ala] PIN OUT: . PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE #18 270 18 TB 2407" 45 940 BSC: 2 a 1035 695 “a 38-4 1490 245 in p | 2x 9-130 - oh Bsc rv 055 835 Se a ef sh | [rates ap | “Ll 245 | (Sues Lu TT 2 . 750 % BETES Lazooasc tose 3 088 4b | | 200880 w4oasc 4 NOTE: All ificati i i SSDI prior to release.
SFF10N100N —— SSDI SFF10N100P SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL_CHARACTERISTICS. @ T=25°C (Unless Otherwise Specified) RATING symeo. | win | typ | max __| unr | Drain to Source Breakdown Voltage . L (VGS=0 V, ID=3mA) BVpss 1000 Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS =15V, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Vasith) Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 110 155 Gate to Source Charge 50% rated ys Qgs 20 45 Gate to Drain Charge ated | Qga 40 80 Turn on Delay Time paar rae td(on) 30 50 Rise Time 50% rated ID tr 20 50 Turn Off Delay Time RG=6.2Q, td(off) 110 130 Fall Time VGS=10V tt 40 50 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ees ter 1200 nsec Reverse Recovery Charge di/dt=100 A/usec Qrr _ uc Input Capacitance VGS=0 Volts 4000 Output Capacitance VDS=25 Volts 310 Reverse Transfer Capacitance f= 1 MHz 70 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.