F00177_15 SSDI

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Technical content

SOLID STATE DEVICES, INC SFF10N100Z

14849 Firestone Boulevard - La Mirada,CA 90638

Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 = =

10 AMP

Designer’s Data Sheet- 1000 VOLTS 1.20 FEATURES: - N-CHANNEL ; 7 POWER MOSFET : Rugged construction with polysilicon gate : . Low RDS(on) and high transconductance TO-254 TO-254Z . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance : Increased reverse energy capablity, Gg . ow input and transfer capacitance for easy paralleling iS . Ceramic Seals for improved hermeticity Ze Ky . Hermetically sealed power package ° ZAG 4 . TX, TXV and Space Level screening available

5 Replaces: IXTH10N100 Types

MAXIMUM RATINGS: . CHARACTERISTIC symBoL_ | VALUE | _—_UNIT Operating and Storage Temperature Top & Tstg Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 545 389 260 (5571 9189 #90 050 B10: | [ E50 _ a .050

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SFF10N100Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 _ Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS. @ Ty=25°C (Unless Otherwise Specified) RATING sywpou| min | rye | max | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=3mA) BVoss Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS = 15V, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current e (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS. +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 110 155 Gate to Source Charge 50% rated YDS Qgs 20 45 Gate to Drain Charge lated Qga 40 80 Turn on Delay Time voosee ta(on) 30 50 Rise Time 50% Rated ID tr 20 50 Turn Off Delay Time RG=6.20 td(otf) 110 130 Fall Time VGS=10V tt 40 50 Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, Td=25°C) Diode Reverse Recovery Time ees Reverse Recovery Charge di/dt=100 Ajusec Input Capacitance VGS=0 Volts Ciss 4000 Output Capacitance VDS=25 Volts Coss 310 Reverse Transfer Capacitance f=1MHz Crss 70 SAFE OPERATING AREA (S.0.A.) TC = 25 C, O.C. CONDI EH a TY eS A a | ~- So eee ee ee s PA Fj Fe A

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& TT ee TT et LUTE UTI TTT On 1 10 100 1000 DRAN TO SOURCE VOLTAGE (VDS)