F00169_15 SSDI
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Technical content
SOLID STATE DEVICES, INC Sere ANEON
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ree 24aAMP Designer’s Data Sheet 500 VOLTS 0.23 Q FEATURES: N-CHANNEL a ” POWER MOSFET : Rugged construction with polysilicon gate - Low RDS(0n) and high transconductance TO-258 TO-259 + Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling & . Ceramic Seals for improved hermeticity SS zy . Hermetically sealed surface mount power package ZAP HS + TX, TXV and Space Level screening available 6 2QRF 4 : Replaces: IXTH24N50 Types ° MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | un si Continuous Drain Current eee ee Amps Operating and Storage Temperature -55 to +150 “ct Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: T9289 (F) A TAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 695 . ; . 8 2401 04s 940 BSC: 270 m4 ‘ 695 249 ree] neo? "685 1 Lf 25 BSC a ST oss 707 aa T 0 |S} 550 ‘897 8 $89 #SNE 285 Bsc 380 4255. ~T 245 750 % 4+ | Lb aezo0nse _-1408sc 4 3% 08534+ 1 Loeooase — -t408sc-! NOTE: Al ificati i SSDI prior to release.
SFF24N50P SOLID STATE DEVICES, INC Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeot | win | typ__| max _ | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss v Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS>VGS, ID=4mA) Vas(th) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(B) IDS=50% rated ID) 16 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 180 Gate to Source Charge sore rated vos Qgs 40 Gate to Drain Charge o Rate Qga 85 Turn on Delay Time voOe soe td(on) 16 30 Rise Time 50% rated ID tr 33 fe Turn Off Delay Time AG=6.20 ta(ott) 85 130 Fall Time VGS=10V tt 30 40 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time qeee5'C nsec Reverse Recovery Charge di/dt=100 A/usec pc Input Capacitance VGS=0 Volts Ciss 4200 Output Capacitance VDS=25 Volts Coss 450 Reverse Transfer Capacitance f= 1 MHz Crss 135 SAFE OPERATING AREA (S.0.A.) 10 ee aa ae eaiiiemesi ieee ieee mail eee est cy See a eg 6 Ee ee oT os SO a oa I TT TTT TTT O1 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VDS)