F00163_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC { 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424
75 AMP
Designer’s Data Sheet 09 woLTs eee FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate + Low RDS(on) and high transconductance TO-3 . Excellent high temperature stability . Very fast switching speed : Fast recovery and superior dv/dt performance S - Increased reverse energy capability . Low input and transfer capacitance for easy paralleling S ' Hermetically sealed power package - TX, TXV and Space Level screening available i] U : Replaces: IXTH75N10 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 *c Total Device Dissipation @ TC=25°C 250 Total Device Dissipation @ TC=55°C 190 PACKAGE OUTLINE: TO-3 PIN OUT: 497: PIN 1: SOURCE £0975" nox. : PIN 2: GATE “| CASE: DRAIN " . o "max 9.450" 0935" nox owe (bh SS 0188" tT > 0.420 7 oot ne SLA tis: SSDI prior to release.
SFF75N10/3 PRELIMINARY SSI Dil SFF75N10/3 SOLID STATE DEVICES, INC ‘ 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sypou| Min | typ_| max | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250yA) BVpss Drain to Source on State Resistance |D=37.5A 0.025 (VGS=10 V) ID=75 A Rps(on) 0.030 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 7 Gate Threshold Voltage (VDS>VGS, ID=4mA) Vasith) 4.0 Forward Transconductance (VDS >!D(on) X RDS(on) Max, S$) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +200 Gate to Source Leakage Reverse -200 . | Total Gate Charge VGS=10 Volts Qg 160 260 Gate to Source Charge 50% rated yos Qgs 16 70 Gate to Drain Charge o Rater Qgd 50 160 Turn on Delay Time vob prud ta(on) 30 40 Rise Time 50% rated ID tr 35 100 Turn Off Delay Time RG=6.20 td(off) 100 120 Fall Time VGS=10V tt 40 80 Diode Forward Voltage v Diode Reverse Recovery Time Tar26'G 120 nsec Reverse Recovery Charge di/dt=100 A/usec _ uc Input Capacitance VGS=0 Volts Ciss 4500 Output Capacitance VDS=25 Volts Coss 1600 Reverse Transfer Capacitance f= 1 MHz Crss 800 SAFE OPERATING AREA (S.0.A.) Te = 25 C, D.C. CONN 100 SS a aS Poa ee ee oe SO Fo a a A z LE TT 2 == ee . ° a a Tr er a a ey ee “ DRAN To SOURCE vo.tace (vos) 00