F00161_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
—EEEEEE . SFF75N10B i SOLID STATE DEVICES, INC Tee
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424
75 AMP
Designer’s Data Sheet 100 VOLTS 0.025 Q FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate : Low RDS(on) and high transconductance MILPACK 2 - Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability : Low input and transfer capacitance for easy paralleling <S . Ceramic Seals for improved hermeticity < 7 . Hermetically sealed surface mount power package SO ZA . TX, TXV and Space Level screening available . Replaces: IXTH75N10 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Watts PACKAGE OUTLINE: MILPACK 2 — oassoier — PIN OUT: PIN 1: DRAIN ; rte) PIN 2: SOURCE aed PIN 3: GATE 0.5002,010" ange#.005" oxgos.o10" oadoto10" (2 PLCS) —__| NOTE: All ificati bj SSDI prior to release.
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sympo.| min | typ_| max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=2501A) BVpss Drain to Source on State Resistance §|D=37.5A 0.025 (VGS=10 V) ID=75 A 0,030 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 75 Gate Threshold Voltage (VDS2VGS, ID=4mA) Forward Transconductance (VDS >ID(on) X_RDS(on) Max, IDS=50% rated ID) 25 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 by) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +200 Gate to Source Leakage Reverse -200 «| Total Gate Charge VGS=10 Volts Qg 160 260 Gate to Source Charge 50% rated vos Qgs 16 70 Gate to Drain Charge % Rater Qga 50 160 Turn on Delay Time vops rae ta(on) 30 40 Rise Time 50% rated ID tr 35 100 Turn Off Delay Time RG=6.20 td(oft) 100 120 Fall Time VGS=10V tt 40 80 Diode Forward Voltage Vsp v (IS=rated ID, VGS=0 V, TJ=25°C) 1.75 Diode Reverse Recovery Time eeee'6 nsec Reverse Recovery Charge di/dt=100 A/usec pe Input Capacitance VGS=0 Volts Ciss 4500 Output Capacitance VDS=25 Volts Coss 1600 Reverse Transfer Capacitance f= 1 MHz Crss 800