F00151 SSDI
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Technical content
SOLID STATE DEVICES, INC y F
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424
40 AMP
Designer's Data Sheet 300 VOLTS 0.10 Q FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance TO-3 . Excellent high temperature stability . Very fast switching speed © : Fast recovery and superior dv/dt performance . Increased reverse energy capability IS . Low input and transfer capacitance for easy paralleling . Hermetically sealed power package ou . TX, TXV and Space Level screening available i] . Replaces: IXTH40N30 Types MAXIMUM RATINGS CHARACTERISTIC symeot_ | value | uN | Drain o Source Votage | vos | ooo vt FconinasOancuren Operating and Storage Temperature Total Device Dissipation @ TC=25°C 250 Total Device Dissipation @ TC=55°C 190 PACKAGE OUTLINE:TO-3 PIN OUT: Hee PIN 1: SOURCE 20.875" max, PIN 2: GATE | CASE: DRAIN asa 7 0138" nex oa O IN e106° vax tT > az (O @) rae | SS q oust cag 7L eee: 1S be gga fase ome NOTE: All iticati bject to chi ithout SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING symeot | min | typ | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250y,A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Ves(th) Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(v) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 ¥) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 177 200 Gate to Source Sharge 50% rated VDS Qgs 28 50 Gate to Drain Charge 50% Rat Qga 78 105 Turn on Delay Time yop. oe td(on) 30 50 Rise Time 50% rated ID tr 60 go Turn Off Delay Time RG=2.00 td(off) 175, 250 Fall Time VGS=10V tt 45 90 Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time rs 325 nsec Reverse Recovery Charge di/dt=100 A/usec 7” ne Input Capacitance VGS-=0 Volts Ciss 4800 Output Capacitance VDS=25 Volts Coss 745 Reverse Transfer Capacitance f= 1 MHz Crss 283 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.