F00149_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
” SFF40N30B SOLID STATE DEVICES, INC S hemos (Fit) 670°S801 (7784) Pax: (748) 820-7424 = jone: ‘ax: -
40 AMP
Designer’s Data Sheet 300 VOLTS 0.10 Q FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS (on) and high transconductance MILPACK 2 . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt Performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity . Hermetically sealed power surface mount package . TX, TXV and Space Level screening available . Replaces: IXTH40N30 Types MAXIMUM RATINGS CHARACTERISTIC symeo. | VALUE | UNT | Drain to Source Votage [ves | ooo |v | Fcramoietnncwen |e Operating and Storage Temperature -55 to +150 “c Total Device Dissipation @ TC=25°C Tota! Device Dissipation @ TC=55°C PACKAGE OUTLINE:MILPACK 2 a7est.o10" PIN OUT: PIN 1: DRAIN ozi9s.010" PIN 2: SOURCE @ rcs PIN 3: GATE osest.ao" osoce.o10" 0.0608.005° osgos.o10" o4aoe.ni0" @ PLCS) 1054005" ——— Te NOTE: All iticati ibject to chi ith SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) [RATING | sympcn | om | rv | wax | unre | Drain to Source Breakdown Voltage (VGS=0 V, ID=2501A) BVoss Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Ves(th) 40 Forward Transconductance (vos >ID(on) X_RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current VDS=max rated voltage, VGS=0 yy) Ipss 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Chari VGS=10 Volts Qg 177 200 Gate to Source Sharge Sem tated VDS Qgs 28 50 Gate to Drain Charge 50% Rated Qga 78 105 Turn on Delay Time yoo yd td(on) 30 50 Rise Time 50% rated ID tr 60 90 Turn Off Delay Time RG= 2.00 ta(ott) 175 250 Fall Time VGS=10V tt 45 90 Diode Forward Voltage (iS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ees nsec Reverse Recovery Charge di/dt=100 A/usec pe Input Capacitance VGS=0 Volts Ciss 4800 Output Capacitance VDS=25 Volts Coss 745 Reverse Transfer Capacitance f= 1 MHz Crss 283 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.