F00145 SSDI
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Technical content
SSDI PRELIMINARY & . =|)’ SFF40N30N SOLID STATE DEVICES, INC </ SFF40N30P
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424
40 AMP
Designer's Data Sheet 300 VOLTS 0.10 Q FEATURES: N-CHANNEL . Plugged construction with polysilicon gate POWER MOSFET : ow (on) and high transconductance : Exeetiont Nigh temperature stability TO-258 T0280 + Very fast switching speed . Fast recovery and superior dv/dt Performance . Increased reverse energy capability , Gi . ow input and transfer capacitance for easy paralleling (a . geramic Seals for improved hermeticity 222 > . lermetically sealed package 6 Dy QS . TX, TXV and Space Level screening available é PRI SF . Replaces: IXTH40N30 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | un | Drain o Source Votage [vos [00 | Vos Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TO 259 (F) OT aT aAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE IT Be 24g O45 o4o 850 370 K ‘ 3 -2407° 045, ree] no 30 [685 1 Lets Bsc SL oss
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‘697 BIS 3B aes 285 BSC 235 | T RS Ll T 255, “| 245 750 5 750 3 0984+ | L ozooasc _-t4088¢ 4 & 084+ | | az00ase -w4oesc 4 NOTE: All bi hi ith NOTE eects av euiec sangn cites | DATA SHEET #: FO014S B [we] SSDI prior to release.
SFF40N30P SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ TJ=25.C (Unless Otherwise Specified) [RATING wpe | min | ye | MAX | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID Rps(on) On State Drain Current (VDS >ID(on) X_RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS2VGS, ID=4mA) Vasith) Forward Transconductance (VDS >ID(on) X_RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current 250 (VDS=max rated voltage, VGS=0 Y {ooo pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS- 4 o0 Gate to Source Leakage Reverse Total Gate Charge VGS=10 Volts Qg W7 200 Gate to Source Sharge 50% rated VOS Qgs 28 fo Gate to Drain Charge Qga VDD=50% Turn on Delay Time rated VDS td(on) 3 50 Rise Time 50% rated ID tr 175 250 Turn Off Delay Time RG= 2.092 td(off) Fall Time VGS=10V tt 45 90 IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C Diode Reverse Recovery Time IFerated ID kd nsec Reverse Recovery Charge di/dt=100 A/usec QrR itled Input Capacit VGS=0 Volts Ciss 4800 Output ‘Capacitance VDS=25 Volts Coss 745 Reverse Transfer Capacitance f- 1 MHz Cres 283 SAFE OPERATING AREA. (S.0.A.) 10 = Sees est | eee eee eee est oe Sl os oN PH § vob IN
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a oat — UTI TTI TT TTT On 1 10 100 1000 DRAN TO SOURCE VOLTAGE (VDS) -