F00137_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SSDI PRELIMINARY - ; EE | SFF50N20B _ SOLID STATE DEVICES, INC eon aa H eee! one: + Fax: - ‘ . 50 AMP Designer’s Data Sheet 200 VOLTS 0.050 2 FEATURES: N-CHANNEL POWER MOSFET : Rugged construction with polysilicon gate : Low RDS(on) and high transconductance MILPACK 2 . Excellent high temperature stability : Very fast switching speed : Fast recovery and superior dv/dt performance . Increased reverse energy capability : Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity : Hermeticaily sealed power surface mount package : TX, TXV and Space Level screening available ‘ Replaces: IXTH50N20 Type MAXIMUM RATINGS: CHARACTERISTIC syMeo. | VAWE | UNT | Fconmenoancwen PT Operating and Storage Temperature Total Device Dissipation @ TC=25'C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: MILPACK 2 PIN OUT: [— o7essa.0" — PIN 1: DRAIN PIN 2: SOURCE ozi0s.010" PIN 3: GATE asoseai0" @ rics osocenie" 0608005" osacscior cata) oe Toa NOTE: All ificati bj ith: SSDI prior to release.
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS. @ Ty=25°C (Unless Otherwise Specified) [RATING = spon] on | typ | max | UNIT Drain to Source Breakdown Voltage (VGS=0 V, ID=250,,A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=4mA) Vv Forward Transconductance (VDS >ID(on) X_RDS(on) Max, S(o) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 HA (VDS=80% rated VDS. VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward] At rated VGS +100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS=10 Volts Qg 190 Gate to Source Charge 50% rated V ps Qgs 35 Gate to Drain Charge a Qga 95 Turn on Delay Time VoD sore td(on) 28 Rise Time 50% rated ID tr 33 Turn Off Delay Time RG= 6.20 ta(otf) 110 Fall Time VGS=10V tt 30 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V. TJ=25°C) . - Td=25°C Diode Reverse Recovery Time IF=10A nsec Reverse Recovery Charge di/dt=100 A/usec pe Input Capacitance VGS=0 Volts Ciss 4400 Output Capacitance VDS=25 Volts Coss 800 Reverse Transfer Capacitance f= 1 MHz Crss 285 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.